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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
NEMO5 Tutorial 4D: NEMO5 Python Solvers
17 Jul 2012 | | Contributor(s):: Daniel F Mejia
This tutorial presents a brief introduction to PythonSolvers, a way to expand NEMO5 functionality using Python. Basic principles and a walk through are presented.
NEMO5 Tutorial 5A: Devi ce Simulation - Quantum Dots
17 Jul 2012 | | Contributor(s):: Jean Michel D Sellier
This presentation introduces the capabilities of NEMO5 to simulate quantum dots.
NEMO5 Tutorial 3: Models
This tutorial presents the models implemented in NEMO5. A description on how the solvers interact with each other is reported along with the options of the various solvers. An example on how to make a simulation that involves strain calculations, Schroedinger wave functions calculations and an...
NEMO5 Overview Presentation
17 Jul 2012 | | Contributor(s):: Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck
This presentation gives an overview of the current functionality of NEMO5.
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | | Contributor(s):: Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered...
Illinois Nano EP Seminar Series Fall 2011: Current Status of Coherent Large-Scale InP Photonic Integrated Circuits
02 May 2012 | | Contributor(s):: Frederick A. Kish, Jr.
The current state-of-the-art for large-scale lnP photonic integrated circuits (PICs) is reviewed with a focus on the devices and technologies that are driving the commercial scaling of these highly integrated devices. Specifically, high-capacity dense wavelength division multiplexed (DWDM)...
Quantum Dot based Photonic Devices
01 Apr 2012 | | Contributor(s):: Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region ofphotonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.for the next generation communication systems offers unique characteristics such astemperature-insensitivity, high...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 40: Ballistic Transport in Devices II
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET
ECE 656 Lecture 37: Non-Local Transport
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 33: Non-Local Transport
ECE 656 Lecture 33: Heterostructures
Outline:Review of L31Carrier temperature and heat fluxHeterostructuresSummary
ECE 656 Lecture 34a: Monte Carlo Simulation I
OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
ECE 656 Lecture 34b: Monte Carlo Simulation II
nanoHUB-U FoN Quantum Models: Scientific Overview
14 Feb 2012 | | Contributor(s):: Supriyo Datta
ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012 | | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I
ECE 656 Lecture 39: Ballistic Transport in Devices I
Outline:Transport across a barrierTransport across a thin baseHigh-field collectorsQuestions?
ECE 656 Lecture 36: High-field Transport
Outline:Brief IntroductionCurrent EquationQualitative features of high field transportSaturated velocityElectron temperature modelSurvey of resultsQuick Summary