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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Discussion Session 1 (Lectures 1a, 1b and 2)
08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta
“Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the...
Lecture 2: Quantum of Conductance: Resistance and uncertainty
08 Sep 2010 | Online Presentations
2010 MNTL UIUC Symposium Lecture 5 - Device Scaling
24 Aug 2010 | Online Presentations | Contributor(s): Peter Apostolakis
2010 MNTL UIUC Symposium Lecture 3 - Large Scale InP Photonic Integrated Circuits
24 Aug 2010 | Online Presentations | Contributor(s): Frederick A. Kish, Jr.
Frederick A. Kish, Jr., Ph.D. is Vice President, PIC Development and Manufacturing for Infinera Corporation. From November 1999 to May 2001, Dr. Kish served as R&D and Manufacturing Development...
2010 MNTL UIUC Symposium Lecture 1 - Milton Feng at 60 : The Metamorphosis of the Transistor into a Laser
09 Aug 2010 | Online Presentations | Contributor(s): Nick Holonyak, Jr
Nick Holonyak, Jr. (born November 3, 1928, in Zeigler, Illinois)
invented the first visible LED in 1962 while working as a consulting
scientist at a General Electric Company laboratory in...
2010 MNTL UIUC Symposium Lecture 4 - MicroElectronics
09 Aug 2010 | Online Presentations | Contributor(s): Shyh-Chiang Shen
Dr. Shen received his B.S. and M.S. degrees in electrical engineering at the National Taiwan University in 1993 and 1995, respectively. He earned his Ph.D. in electrical engineering at the...
2010 MNTL UIUC Symposium Lecture 2 - Optoelectronics
09 Aug 2010 | Online Presentations | Contributor(s): Russell D. Dupuis
Russell D. Dupuis earned all of his academic degrees from the University of Illinois at Urbana-Champaign. He received his bachelor’s degree with “Highest Honors-Bronze Tablet” in 1970. He...
Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors
This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such...
Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowires
Relationship between dispersion relationship and transmission in perfectly ordered...
Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses the consequences of Alloy Disorder in strained InGaAs Quantum Dots
Reminder of the origin of bandstructure and bandstructure engineering
What happens when...
Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses disorder in AlGaAs unstrained systems in bulk.
Bandstructure of an ideal simple unit cell
What happens when there is disorder?
Concept of a...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation demonstrates the importance of long-range strain in quantum dots
Numerical analysis of the importance of the buffer around the central quantum dot - local band edges –...
Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
This presentation provides a very high level software overview of NEMO3D. The items discussed are:
Modeling Agenda and Motivation
Tight-Binding Motivation and basic formula...
27 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom
his talk is an undergraduate level introduction to the field. After
a brief discussion of applications, the physics of the Peltier effect
is described, and the Figure of Merit (FOM), ZT,...
Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
20 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D.
This lecture provides a very high level overview of quantum dots. The main issues and...
Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects
07 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
(quantitative RTD modeling at room temperature)
NSU Lectures on Low-Field Transport: Lecture 0
06 Jul 2010 | Online Presentations | Contributor(s): Mohammad Mayy, Mark Lundstrom
A clear understanding of near equilibrium carrier transport is essential for working on materials and devices. The field is an old one that has been treated in classic textbook, but with the rapid...