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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Research Within Vasileska Group
29 Jun 2010 | Online Presentations | Contributor(s): Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.
WALLA Lecture: Electronics, Microelectronics and Nanoelectronics
06 May 2010 | Online Presentations | Contributor(s): Mark Lundstrom
The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in...
Lecture 7: On Reliability and Randomness in Electronic Devices
14 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | Online Presentations | Contributor(s): Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor
(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of...
Lecture 9: Breakdown in Thick Dielectrics
05 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Breakdown in gas dielectric and Paschen’s law
Spatial and temporal dynamics during breakdown
Breakdown in bulk oxides: puzzle
Theory of pre-existing defects: Thin oxides
Nonequilibrium Green’s functions theory: Transport and optical gain in THz quantum cascade lasers
26 Mar 2010 | Online Presentations | Contributor(s): Tillmann Christoph Kubis
Quantum cascade lasers (QCLs) are promising sources of coherent THz radiation. However, state of the art THz-QCLs are still limited to cryogenic temperatures. The charge transport in these QCLs is...
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF
09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, current-voltage...
Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple level-drop potential model and a more realistic device using a Thomas-Fermi...
Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions
One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The...
Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering
Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of...
Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry...
Nanoelectronic Modeling Lecture 26: NEMO1D -
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that...
Nanoelectronic Modeling Lecture 27: NEMO1D -
This presentation provides a very high level software overview of NEMO1D. The items discussed are:
Graphical user interface
Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts
07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode
Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT
Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT
Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain
Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown