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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Online Presentations (41-60 of 896)

  1. ECE 695A Lecture 21R: Review Questions

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    12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the name of the failure distribution that we expect for thin oxides? For thin oxides, is PMOS or NMOS more of a concern in modern transistors? What is DBIE? When...

    http://nanohub.org/resources/17249

  2. ECE 595E Lecture 22: Full 3D Bandgaps

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    06 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel

    Outline: Recap from Wednesday 3D Lattice Types Full 3D Photonic Bandgap Structures Yablonovite Woodpile Inverse Opals Rod-Hole 3D PhCs

    http://nanohub.org/resources/17195

  3. ECE 595E Lecture 20: Bandstructure Concepts

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    06 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel

    Outline: Recap from Friday Bandstructure Problem Formulation Bloch’s Theorem Reciprocal Lattice Space Numerical Solutions 1D crystal 2D triangular lattice 3D diamond...

    http://nanohub.org/resources/17192

  4. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

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    05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Basic features of gate dielectric breakdown Physical characterization of breakdown spot Time-dependent defect generation Conclusions

    http://nanohub.org/resources/17027

  5. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

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    05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/17028

  6. ECE 695A Lecture 19R: Review Questions

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    04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions:: If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods? What is the relationship between Gauss and Tesla as units...

    http://nanohub.org/resources/17196

  7. ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance

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    01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Importance of measuring interface damage Electronic Spin Resonance ( A quick review) Spin Dependent Recombination Electrically detected spin-resonance and noise-...

    http://nanohub.org/resources/17024

  8. ECE 695A Lecture 17R: Review Questions

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    01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation? Why do people like to use C-V techniques? What method would you use for HCI...

    http://nanohub.org/resources/17155

  9. ECE 695A Lecture 18R: Review Questions

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    01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Between DCIV and CP methods, which one is easier and why? In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods? What are the...

    http://nanohub.org/resources/17159

  10. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

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    25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Recall: Properties of Interface Defects Flux-based method 1: Direct Current-Voltage method Flux-based method 2: Charge pumping method Conclusions

    http://nanohub.org/resources/17023

  11. ECE 695A Lecture 16: Review Questions

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    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such...

    http://nanohub.org/resources/17014

  12. ECE 695A Lecture 17: Subthreshold and Idlin Methods

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    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16965

  13. ECE 695A Lecture 15R: Review Questions

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    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....

    http://nanohub.org/resources/16933

  14. ECE 695A Lecture 14a: Voltage Dependent HCI I

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16895

  15. ECE 695A Lecture 14b: Voltage Dependent HCI II

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16896

  16. ECE 695A Lecture 14R: Review Questions

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of...

    http://nanohub.org/resources/16897

  17. ECE 695A Lecture 15: Off-state HCI Degradation

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    http://nanohub.org/resources/16919

  18. ECE 695A Lecture 16: Temperature Dependence of HCI

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    http://nanohub.org/resources/16920

  19. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    http://nanohub.org/resources/16887

  20. ECE 695A Lecture 13R: Review Questions

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    http://nanohub.org/resources/16888

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nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.