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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 16: Review Questions
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22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such a …
ECE 695A Lecture 17: Subtheshold and Idlin Methods
21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. …
ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of HCI …
ECE 695A Lecture 15: Off-state HCI Degradation
Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions
ECE 695A Lecture 16: Temperature Dependence of HCI
Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond Dissociation Conclusions
ECE 695A Lecture 13R: Review Questions
Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted …
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions: What is the difference between coordination and composition? Is periodicity essential for a defect-free structure? Why can’t the amorphous material have arbitrary ring …
ECE 695A Lecture 11R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support …
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
ECE 695A Lecture 12: Field Dependence of NBTI
Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion
ECE 695A Lecture 12R: Review Questions
Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation process …
ECE 695A Lecture 9R: Review Questions
Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that the …
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Review: Temperature activation NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation energy Conclusion
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Outline: Background: Time-dependent degradation The Reaction-Diffusion model Approximate solution to R-D model in stress phase Degradation free transistors Conclusions
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Strain in materials/origin of defects Examples: bulk defects Examples: interface defects Measurements Conclusions
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