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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 595E Lecture 23: Electronic Bandstructures
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27 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel
Outline: 3D Lattice Types Full 3D Photonic Bandgap Structures Yablonovite Woodpile Inverse Opals Rod-Hole 3D PhCs
ECE 695A Lecture 25R: Review Questions
27 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions: Explain why percolation resistance is area independent? Why is the physical origin of the distribution of percolation resistance? How would the ratio of hard and soft breakdown …
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Observations: Failure times are statistically distributed Models of Failure Distribution: Extrinsic vs. percolation Percolation theory of multiple Breakdown TDDB lifetime projection …
ECE 695A Lecture 24R: Review Questions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Outline: Oxide breakdowns need not be catastrophic Observations about soft vs. hard breakdown A simple model for soft/hard breakdown Interpretation of experiments Conclusions
ECE 595E Lecture 21: 3D Bandstructures
19 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel
Outline: Recap from Monday Bandstructure Symmetries 2D Photonic Bandstructures Periodic Dielectric Waveguides Photonic Crystal Slabs
ECE 595E Lecture 24: Electronic Bandstructure Simulation Tools
Outline: Electronic bandstructure lab Basic Principles Input Interface Exemplary Outputs Density functional theory (DFT) DFT in Quantum ESPRESSO
ECE 695A Lecture 23R: Review Questions
19 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 22R: Review Questions
ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions: What is the name of the failure distribution that we expect for thin oxides? For thin oxides, is PMOS or NMOS more of a concern in modern transistors? What is DBIE? When …
ECE 595E Lecture 22: Full 3D Bandgaps
06 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel
Outline: Recap from Wednesday 3D Lattice Types Full 3D Photonic Bandgap Structures Yablonovite Woodpile Inverse Opals Rod-Hole 3D PhCs
ECE 595E Lecture 20: Bandstructure Concepts
Outline: Recap from Friday Bandstructure Problem Formulation Bloch’s Theorem Reciprocal Lattice Space Numerical Solutions 1D crystal 2D triangular lattice 3D diamond lattice
ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Basic features of gate dielectric breakdown Physical characterization of breakdown spot Time-dependent defect generation Conclusions
ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions:: If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods? What is the relationship between Gauss and Tesla as units of …
ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance
01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Importance of measuring interface damage Electronic Spin Resonance ( A quick review) Spin Dependent Recombination Electrically detected spin-resonance and noise- spectroscopy …
ECE 695A Lecture 17R: Review Questions
Review Questions: What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation? Why do people like to use C-V techniques? What method would you use for HCI …
ECE 695A Lecture 18R: Review Questions
Review Questions: Between DCIV and CP methods, which one is easier and why? In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods? What are the problems …
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Recall: Properties of Interface Defects Flux-based method 1: Direct Current-Voltage method Flux-based method 2: Charge pumping method Conclusions
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