Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | Online Presentations | Contributor(s): Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future...
Calculation of phonon transmission in Si/PtSi heterostructures
25 Jan 2016 | Online Presentations | Contributor(s): Jung Hyun Oh, Mincheol Shin
In this work we examine the suppression of phonon transport in another example, Si and SiPt heterostructures (3D). This heterostrucure is believed to have the benefit that the electrical...
Variational Formulation of Stable Discrete k · p Models
25 Jan 2016 | Online Presentations | Contributor(s): William R Frensley
IWCE 2015 presentation. the longstanding problem of spurious states in k·: ; p models of semiconductor nanostructures has been shown to be an artifact of the use of the...
nanoHUB - Educational Tour de Force
14 Jan 2016 | Online Presentations | Contributor(s): David K. Ferry
nanoHUB was originally created to bring together the computational electronics world as a place where programs and results could be efficiently shared. For that purpose, it has matured and grown...
Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
05 Jan 2016 | Online Presentations | Contributor(s): Min S. Choi, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological...
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
05 Jan 2016 | Online Presentations | Contributor(s): Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC)...
Quick Review of Semiconductor Fundamentals
05 Jan 2016 | Online Presentations | Contributor(s): Mark Lundstrom
This lecture quickly summarizes some important semiconductor fundamentals. For those acquainted with semiconductors, it may be useful as a brief refresher. For those just getting started with...
Thermionic Escape in Quantum Well Solar Cell
18 Dec 2015 | Online Presentations | Contributor(s): Nicolas Cavassilas, Fabienne Michelini, Marc Bescond
This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement,...
nanoHUB-U Fundamentals of Nanoelectronics B: Quantum Transport: Scientific Overview
11 Dec 2015 | Online Presentations | Contributor(s): Supriyo Datta
This video is the Scientific Overview for the nanoHUB-U course "Fundamentals of Nanoelectronics Part B: Quantum Transport" by Supriyo Datta.
Lessons From Nanoelectronics
10 Dec 2015 | Online Presentations | Contributor(s): Supriyo Datta
This talk is about a less-appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, energy exchange and device operation that it has enabled,...
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...
GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
25 Nov 2015 | Online Presentations | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar...
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | Online Presentations | Contributor(s): Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use...
Time-Resolved Computational Method for Atomistic Open System Simulations
13 Nov 2015 | Online Presentations | Contributor(s): Bozidar Novakovic, Gerhard Klimeck
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015 | Online Presentations | Contributor(s): Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials,...
Simulation of Organic Solar Cell with Graphene Transparent Electrode
13 Nov 2015 | Online Presentations | Contributor(s): Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori
IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a...
Unified View of Electron and Phonon Transport
10 Nov 2015 | Online Presentations | Contributor(s): Mark Lundstrom, Jesse Maassen
A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron...
Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles
05 Nov 2015 | Online Presentations | Contributor(s): Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a...
Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices
05 Nov 2015 | Online Presentations | Contributor(s): Damien Querlioz, Adrien F. Vincent
IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design...
A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden