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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Carbon-Based Nanoswitch Logic
28 Mar 2013 | | Contributor(s):: Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...
ECE 595E Lecture 23: Electronic Bandstructures
27 Mar 2013 | | Contributor(s):: Peter Bermel
Outline:3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs
ECE 695A Lecture 25R: Review Questions
27 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions
ECE 695A Lecture 24R: Review Questions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions
ECE 595E Lecture 21: 3D Bandstructures
19 Mar 2013 | | Contributor(s):: Peter Bermel
Outline:Recap from MondayBandstructure Symmetries2D Photonic BandstructuresPeriodic Dielectric WaveguidesPhotonic Crystal Slabs
ECE 595E Lecture 24: Electronic Bandstructure Simulation Tools
Outline:Electronic bandstructure labBasic PrinciplesInput InterfaceExemplary OutputsDensity functional theory (DFT)DFT in Quantum ESPRESSO
ECE 695A Lecture 23R: Review Questions
19 Mar 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 22R: Review Questions
ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...
ECE 595E Lecture 22: Full 3D Bandgaps
06 Mar 2013 | | Contributor(s):: Peter Bermel
Outline:Recap from Wednesday3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs
ECE 595E Lecture 20: Bandstructure Concepts
Outline:Recap from FridayBandstructure Problem FormulationBloch’s TheoremReciprocal Lattice SpaceNumerical Solutions1D crystal2D triangular lattice3D diamond lattice
ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions
ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between...
ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Importance of measuring interface damageElectronicSpinResonance( Aquickreview)Spin Dependent RecombinationElectrically detected spin-resonance and noise- spectroscopyComparing the approachesConclusions
ECE 695A Lecture 17R: Review Questions
Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...
ECE 695A Lecture 18R: Review Questions
Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...