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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014 | | Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | | Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013 | | Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...
Electron Phonon Interaction in Carbon Nanotube Devices
28 Jun 2013 | | Contributor(s):: Sayed Hasan
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D) wire, is one such possibility. Since the report of the first CNT transistors, lots has been learned...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics,...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
Landauer Approach to Thermoelectrics
23 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
An Overview of Fourth Fundamental Circuit Element- 'The Memristor'
22 Jan 2013 | | Contributor(s):: Tukaram Dattatray Dongale
The fourth fundamental circuit element- Memristor, was mathematically predicted by Prof. Leon Chua in his seminal research paper in IEEE Transaction on Circuit Theory on the symmetric background. After four decade in 2008, researchers at the Hewlett–Packard (HP) laboratories reported the...
A CNTFET-Based Nanowired Induction Two-Way Transducers
05 Sep 2012 | | Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...