
A CNTFETBased Nanowired Induction TwoWay Transducers
05 Sep 2012   Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field twoway nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006   Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations selfconsistently with Poisson’s equation and treats the effect of...

A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006   Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a threedimensional quantum mechanical simulation...

AFRL RXBT Publication List
11 Jan 2012   Contributor(s):: Andrey A Voevodin
List of papers, book chapters, conference presentations, and other publication materials from Thermal Sciences and Materials Branch, Materials and Manufacturing Directorate, AFRL

An Overview of Fourth Fundamental Circuit Element 'The Memristor'
21 Jan 2013   Contributor(s):: Tukaram Dattatray Dongale
The fourth fundamental circuit element Memristor, was mathematically predicted by Prof. Leon Chua in his seminal research paper in IEEE Transaction on Circuit Theory on the symmetric background. After four decade in 2008, researchers at the Hewlett–Packard (HP) laboratories reported the...

Anisotropic magnetoresistance in colossal magnetoresistive La1xSrxMnO3 thin films
03 Sep 2010   Contributor(s):: JengBang (Tony) Yau
We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases...

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008   Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
14 Jan 2008   Contributor(s):: Gerhard Klimeck, Timothy Boykin
The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highk gate...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ gate...

Computational and Experimental Study of Transport in Advanced Silicon Devices
27 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4HSiC
01 Jul 2008   Contributor(s):: Dragica Vasileska
A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental lowfield and highfield characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...

Coupled Effect of Strain and Magnetic Field on Electronic Bandstructure of Graphene
03 Dec 2010   Contributor(s):: yashudeep singh
We explore the possibility of coupling between planar strain and perpendicular magnetic field on electronic bandstructure of graphene. We study uniaxially, biaxially and shear strained graphene under magnetic field. In line with Rammal’s formalism using nearest neighbor tight binding scheme we...

Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
25 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV materials...

Direct mechanical measurement of the tensile strength and elastic modulus of multiwalled carbon nanotubes
07 Oct 2011   Contributor(s):: Brian Demczyk, Y.M. Wang, J. Cumings, M. Hetman, W. Han, A. Zettl. R. O. Ritchie
This work represents the first insitu measurenment of the tensile strength of a carbon nanotuube.

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
27 Jun 2013   Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collisiondominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

Dissipative Quantum Transport in Semiconductor Nanostructures
23 Dec 2011   Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...