Support Options

Submit a Support Ticket


Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Presentation Materials (1-20 of 25)

  1. A Comparative Study of nanoHUB Tools for the Simulation of Carbon-based FETs

    03 Sep 2015 | Presentation Materials | Contributor(s): Jose M. de la Rosa

    This work compares the different tools available in nanoHUB for the electrical simulation of carbon- based field-effect transistors made up of either carbon nanotubes (CNTs) or graphene. ...

  2. Circuit Applications of Carbon Nanotube FETs

    21 Apr 2004 | Presentation Materials | Contributor(s): Natasha Collier, Rand Jean, Saleem Kala, Patrick Ndai

    2003 SURI Circuits Team abstracts and presentation slides. Please view each persons abstract linked below.

  3. Comparisons of macrospin and OOMMF simulations

    26 Jan 2010 | Presentation Materials | Contributor(s): Dmitri Nikonov, George Bourianoff

    Plots of switchign time of nanomagnets by spin torque calculated by macrospin model and micromagnetic tool OOMMF, compared side-by-side. D. E. Nikonov, G. I. Bourianoff, G. Rowlands, I. N....

  4. Electronics at Nano scale

    06 Apr 2007 | Presentation Materials | Contributor(s): Rakesh Kumar gupta

    Current research on nanoelectronics is extremely diverse. Exiting technology of optical lithography used for the fabrication of electronics components,devices and systms already reached to their...

  5. Enhanced Pool Boiling Using Carbon Nanotube Arrays

    21 Apr 2004 | Presentation Materials | Contributor(s): Sebastien Ujereh

    2003 SURI Conference Proceeding

  6. Feasibility of Molecular Assemblers

    15 Aug 2004 | Presentation Materials | Contributor(s): LaDawn Biddle

    Molecular manufacturing is expected to be the Industrial Revolution of the 21st century. Essentially all mechanized products are anticipated to be improved with the use of molecular assemblers.

  7. Hydrodynamic Separation of Micron-sized Particles through Magnetization

    16 Aug 2004 | Presentation Materials | Contributor(s): Michael Benko

    Many assays and lab-on-a-chip projects require the use of uniform magnetic particles. Creating magnetic particles of uniform size and magnetization is a difficult task. The next best alternative...

  8. Infrared Spectroscopy of Self-Assembled Monolayers

    21 Apr 2004 | Presentation Materials | Contributor(s): Maciej Inerowicz

    2003 SURI Conference Proceeding

  9. Low Bias Transport in Graphene: An Introduction (lecture notes)

    22 Sep 2009 | Presentation Materials | Contributor(s): Mark Lundstrom, Tony Low, Dionisis Berdebes

    These notes complement a lecture with the same title presented by Mark Lundstrom and Dionisis Berdebes, at the NCN@Purdue Summer School, July 20-24, 2009.

  10. Measurements of Interface Trap Density in MOS Capacitors Using AC Conductance Method

    15 Aug 2004 | Presentation Materials | Contributor(s): Benafsha Shahlori

    4-H SiC MOS capacitors have a broad interface state density located at approximately 2.9eV above the valence band edge. These states reduce mobility through carrier trapping which in turn...

  11. Misinterpreting X-Ray Diffraction Results

    03 Dec 2008 | Presentation Materials | Contributor(s): Thomas Key

    Common mistakes and misinterpretations associated with the collection and interpretation of x-ray diffraction data.

  12. Modification of Si(111) Surfaces using Self - Assembled Monolayers (SAMs) for Electrochemical and AF

    16 Aug 2004 | Presentation Materials | Contributor(s): Rosangelly Flores Pérez

    Recent researchers in the electrical engineering field are using self-assembled monolayers techniques with aryldiazonium salts solutions to build nanoelectronic devices. This innovation can...

  13. Nanoelectronic Devices, With an Introduction to Spintronics (Lecture Notes)

    01 Nov 2010 | Presentation Materials | Contributor(s): Supriyo Datta

    Collective slides for the Datta lectures.

  14. Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?

    23 Sep 2003 | Presentation Materials | Contributor(s): Victor Zhirnov

    Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International...

  15. Nanoscale Patterning of CdS/CdTe Solar Cells

    21 Apr 2004 | Presentation Materials | Contributor(s): Cesar Lopez

    2003 SURI Conference Proceedings

  16. NCN Student Meet Presentations

    11 Feb 2010 | Presentation Materials | Contributor(s): Abhijeet Paul, Ganesh Krishna Hegde, Ankit Jain, Fengyuan (Thomas) Li, Shuaib Salamat, Xufeng Wang, Insoo Woo, Robert Wortman, Min Xu, Ya Zhou

    These are the presentations given by the students during the first 2010 event for NCN at Purdue. Students showcased a wide genre of research they are doing under the NCN. All the talks have been...

  17. NEGF theory of quantum photovoltaic devices

    22 Sep 2011 | Presentation Materials | Contributor(s): Urs Aeberhard

    Many high-efficiency photovoltaics concepts require an advanced control and manipulation of the optoelectronic properties of the active device structure, leading to a prominent role of low...

  18. Ordered Nanocrystalline Thin Films for High Efficiency CdS/CdTe Solar Cells

    21 Apr 2004 | Presentation Materials | Contributor(s): Javier Gonzalez

    2003 SURI Conference Proceeding

  19. Process Variation: An Evalution of Carbon Nanotube Transistor Field Effect Transistors

    16 Aug 2004 | Presentation Materials | Contributor(s): Sergio Urban, Alvin Lacson, Louis Bonhami

    Process variation is the observed deviation of device parameters in mass production processes. As the critical dimensions of today's MOSFET's are continously decreasing, process variation is...

  20. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is..., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.