Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

14 Jan 2008 | Publications | Contributor(s): Roger Lake

The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function …

https://nanohub.org/resources/3833

Electron-Phonon and Electron-Electron Interactions in Quantum Transport

14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck

The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon …

https://nanohub.org/resources/3831

High Precision Quantum Control of Single Donor Spins in Silicon

14 Jan 2008 | Publications | Contributor(s): Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg

The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis …

https://nanohub.org/resources/3829

Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder

14 Jan 2008 | Publications | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck

Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, …

https://nanohub.org/resources/3827

Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms

14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Timothy Boykin

The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of …

https://nanohub.org/resources/3821

Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Timothy Boykin

Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device …

https://nanohub.org/resources/3819

Simulation of highly idealized, atomic scale MQCA logic circuits

15 Nov 2007 | Publications | Contributor(s): Dmitri Nikonov, George Bourianoff

Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of …

https://nanohub.org/resources/3527

Quantum Ballistic Transport in Semiconductor Heterostructures

27 Aug 2007 | Publications | Contributor(s): Michael McLennan

The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam epitaxy …

https://nanohub.org/resources/3086

Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism

31 Oct 2006 | Publications | Contributor(s): Eric Polizzi, Supriyo Datta

This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the …

https://nanohub.org/resources/1935

Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations

30 Oct 2006 | Publications | Contributor(s): Magnus Paulsson

Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used …

https://nanohub.org/resources/1932

Modeling Quantum Transport in Nanoscale Transistors

30 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal

As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, …

https://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications

30 Oct 2006 | Publications | Contributor(s): Jing Guo

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport …

https://nanohub.org/resources/1928

A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

30 Oct 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its …

https://nanohub.org/resources/1926

Electrical Resistance: an Atomistic View

26 Oct 2006 | Publications | Contributor(s): Supriyo Datta

This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to …

https://nanohub.org/resources/1919

Nanoscale MOSFETs: Physics, Simulation and Design

26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of …

https://nanohub.org/resources/1917

Modeling of Nanoscale Devices

19 Oct 2006 | Publications | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

We aim to provide engineers with an introduction to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale …

https://nanohub.org/resources/1902

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

19 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the …

https://nanohub.org/resources/1900

Introduction to the Keldysh Nonequilibrium Green Function Technique

06 Oct 2006 | Publications | Contributor(s): A. P. Jauho

Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems. The technique is somewhat subtle, and a rigorous treatment would require …

https://nanohub.org/resources/1877

nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of …

https://nanohub.org/resources/1875

Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

28 Sep 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- …

https://nanohub.org/resources/1835