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Tags: nanoelectronics

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Note: Results do not include pending, unpublished, and some private items.

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Publications (21-40 of 70)

  1. Oxidation Behavior of CoCr Thin Films

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    07 Oct 2011 | Publications | Contributor(s): Brian Demczyk

    In this work, elemental redistribution of annealed CoCr thin films has been investigated by X-ray photoelectron spectroscopy.

    https://nanohub.org/resources/12248

  2. Direct mechanical measurement of the tensile strength and elastic modulus of multiwalled carbon nanotubes

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    07 Oct 2011 | Publications | Contributor(s): Brian Demczyk

    This work represents the first in-situ measurenment of the tensile strength of a carbon nanotuube.

    https://nanohub.org/resources/12250

  3. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

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    30 Sep 2011 | Publications | Contributor(s): Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the …

    https://nanohub.org/resources/12182

  4. Rappture setup in Ubuntu

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    23 Aug 2011 | Publications | Contributor(s): David Alberto Saenz

    This is a short article about how to set up a functional copy of a rappture development environment simmilar to the workspace but in a local machine. This permits the user to make use of their own …

    https://nanohub.org/resources/11907

  5. report on carbon nantubes complete

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    11 Jul 2011 | Publications | Contributor(s): kadis prasad

    cnt complete information

    https://nanohub.org/resources/11622

  6. Performance of Magnetic Quantum Cellular Automata and Limitations due to Thermal Noise

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    02 Jun 2011 | Publications | Contributor(s): Ajey Jacob, Dmitri Nikonov

    Operation parameters of magnetic quantum cellular automata are evaluated for the purposes of reliable logic operation. The dynamics if nanomagnets is simulated via Landau-Lifshitz-Gilbert equations …

    https://nanohub.org/resources/11362

  7. Monte Carlo Method and Its Applications

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    29 Jan 2011 | Publications | Contributor(s): Dragica Vasileska

    This book chapter describes the solution of the Boltzmann transport equation via the MC method and it also presents its application of various types of devices simulations.

    https://nanohub.org/resources/10578

  8. Quantum and Coulomb Effects in Nanodevices

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    29 Jan 2011 | Publications | Contributor(s): Dragica Vasileska

    This book chapter presents ways of incorporating quantum mechanical size-quantization and tunneling effects as well as short-range Coulomb interactions within a particle-based device simulation …

    https://nanohub.org/resources/10576

  9. Modeling the quantum dot growth in the continuum approximation

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    12 Jan 2011 | Publications | Contributor(s): Peter Cendula

    Quantum dots can grow spontaneously during molecular beam epitaxy of two materials with different lattice parameters, Stranski-Krastanow growth mode. We study a mathematical model based on the …

    https://nanohub.org/resources/10365

  10. Coupled Effect of Strain and Magnetic Field on Electronic Bandstructure of Graphene

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    07 Dec 2010 | Publications | Contributor(s): yashudeep singh

    We explore the possibility of coupling between planar strain and perpendicular magnetic field on electronic bandstructure of graphene. We study uni-axially, bi-axially and shear strained graphene …

    https://nanohub.org/resources/10126

  11. Surface scattering: Made simple

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    03 Sep 2010 | Publications | Contributor(s): Dmitri Nikonov, Himadri Pal

    Surface scattering in a quantum well.

    https://nanohub.org/resources/9613

  12. Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films

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    03 Sep 2010 | Publications | Contributor(s): Jeng-Bang (Tony) Yau

    We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing …

    https://nanohub.org/resources/9611

  13. Quantum transport in semiconductor nanostructures

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    04 Mar 2010 | Publications | Contributor(s): Tillmann Christoph Kubis

    PhD thesis of Tillmann Christoph Kubis The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the …

    https://nanohub.org/resources/8612

  14. Scattering in NEGF: Made simple

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    09 Nov 2009 | Publications | Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff

    Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for …

    https://nanohub.org/resources/7772

  15. Multiple Transfers of Single-Walled Carbon Nanotubes on Silicon Wafers

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    20 Mar 2009 | Publications | Contributor(s): Alan Salvador Teran

    Single-walled carbon nanotubes (SWCNTs) have many applications, including high speed transistor devices (see Figure 1). SWCNTs are grown on single-crystal quartz wafers and then transferred onto …

    https://nanohub.org/resources/6504

  16. Role of Spin-Orbit Interaction and Berry's Phase in Aharonov-Bohm Oscillations

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    04 Mar 2009 | Publications | Contributor(s): Jeng-Bang (Tony) Yau

    In this thesis we report the results of study on the role of spin-orbit (SO) interaction in Aharonov-Bohm (A-B) oscillations measured in (311)A GaAs two-dimensional (2D) holes, and the observed novel …

    https://nanohub.org/resources/6435

  17. First Principles Non-Equilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling

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    01 Dec 2008 | Publications | Contributor(s): Kirk H. Bevan

    Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex quantum …

    https://nanohub.org/resources/5957

  18. Report of the Joint India-US Workshop on Scalable Nanomaterials for Enhanced Energy Transport, Conversion, and Efficiency

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    30 Sep 2008 | Publications | Contributor(s): Timothy S Fisher

    A Joint Indo-US Workshop on "Scalable Nanomaterials for Enhanced Energy Transport, Conversion and Efficiency"was organized from August 19 to 21, 2008 at Jawaharlal Nehru Centre for Advanced …

    https://nanohub.org/resources/5514

  19. Notes on Fermi-Dirac Integrals (3rd Edition)

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    23 Sep 2008 | Publications | Contributor(s): Raseong Kim, Mark Lundstrom

    Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information …

    https://nanohub.org/resources/5475

  20. Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC

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    01 Jul 2008 | Publications | Contributor(s): Dragica Vasileska

    A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. …

    https://nanohub.org/resources/4845

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