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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
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13 Jun 2012 | Tools | Contributor(s): Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
03 May 2012 | Online Presentations | Contributor(s): Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a …
05 Jun 2012 | Downloads | Contributor(s): James Fonseca
Crystal Orientations Visualization Transports Uploaded June 5, 2012
24 Apr 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones
Calculate and observe the relationship between current, voltage, resistance, and power.
Minority Carrier Diffusion Equation (MCDE) Tool
26 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones
Apply the Minority Carrier Diffusion Equation (MCDE) to model excess carrier concentration as a function of time or distance.
Illinois Nano EP Seminar Series Fall 2011: Current Status of Coherent Large-Scale InP Photonic Integrated Circuits
01 May 2012 | Online Presentations | Contributor(s): Frederick A. Kish, Jr.
The current state-of-the-art for large-scale lnP photonic integrated circuits (PICs) is reviewed with a focus on the devices and technologies that are driving the commercial scaling of these highly …
11 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones
Understand N-Type and P-Type Semiconductor Doping.
28 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
Series and Parallel
17 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
17 Apr 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones
Convert from Delta to Wye configuration for resistances, and vice versa.
28 Feb 2012 | Tools | Contributor(s): Stella Quinones, Robert Benjamin Post
Visualize and understand the complex numbers represented in both rectangular and polar coordinates.
10 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
Resistor Color Code
10 Feb 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones
Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.
Neutron Induced Fission Betavoltaic Battery
10 Apr 2012 | Publications | Contributor(s): Marvin Tan
A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is proposed. …
Theory of Heat Conduction for Two Region Problems Using Green's Functions
29 Mar 2012 | Publications | Contributor(s): Donald E. Amos
This paper derives equations which describe transient temperature distributions in adjacent regions which share a common boundary. These regions consist of materials with distinct, constant physical …
MOSFET Design Calculations - Step 3
01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …
MOSFET Design Calculations - Step 3 (Instructor Copy)
Quantum Dot based Photonic Devices
19 Mar 2012 | Online Presentations | Contributor(s): Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region of photonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc. for the next …
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.