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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 5: Amorphous Material/Interfaces
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Amorphous vs. crystalline materials
Defect-free amorphous material
Origin of defects (Maxwell’s relation)
ECE 695A Lecture 7: Trapping in Pre-existing Traps
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Why are there more types of defects in crystals than in amorphous material?
From the perspective of Maxwell’s relation, how does H reduce defect density?
Why is HfO2 so...
An Overview of Fourth Fundamental Circuit Element- 'The Memristor'
22 Jan 2013 | Papers | Contributor(s): Tukaram Dattatray Dongale
The fourth fundamental circuit element- Memristor, was mathematically predicted by Prof. Leon Chua in his seminal research paper in IEEE Transaction on Circuit Theory on the symmetric background....
Exciton Annihilation Simulator
0.0 out of 5 stars
21 Jan 2013 | Tools | Contributor(s): Michael Heiber
Simulates exciton-exciton annihilation behavior of polymer semiconductors measured by pump-probe spectroscopy
ECE 695A Lecture 3: Reliability as a Threshold Problem
17 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Reliability as a Threshold Problem: Empirical vs. Physical Models
‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distribution
Four elements of...
ECE 695A Lecture 4: Structures and Defects in Crystals
Defect-free crystal structures
Defects in crystals
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...
ECE 695A Lecture 2: A Brief History of Reliability and Types of Reliability Models
16 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Reliability as a General Phenomena
A Brief History of Reliability
Approaches to Reliability Physics
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Evolving Landscape of Electronics
Performance, Variability, and Reliability
Classification of Reliability
Excited State Spectroscopy of a Quantum Dot Molecule
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed...
The Single-Atom Transistor: How It Was Created and What It May Mean for the Future
21 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Professor Gerhard Klimeck will be coming to speak on his research with single atom transistors.
Engineering Disorder in Opto-Electronics
05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency...
Thermoelectric Energy Conversion: Transport, Materials, and Systems
05 Dec 2012 | Online Presentations | Contributor(s): Gang Chen
his talk will start with an introduction to thermoelectric effects, and move on to discuss ways to understand and engineer electron and phonon transport in thermoelectric materials to improve the...
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Uniform Methodology of Benchmarking Beyond-CMOS Devices
31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and...
Energies and Lifetimes with Complex-Scaling
25 Oct 2012 | Tools | Contributor(s): Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is
A CNTFET-Based Nanowired Induction Two-Way Transducers
05 Sep 2012 | Papers | Contributor(s): Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized....