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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
3.0 out of 5 stars
19 Apr 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.
18 Apr 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
Resistor Color Code
0.0 out of 5 stars
17 Apr 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones
Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.
Neutron Induced Fission Betavoltaic Battery
11 Apr 2012 | Papers | Contributor(s): Marvin Tan
A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is...
Theory of Heat Conduction for Two Region Problems Using Green's Functions
03 Apr 2012 | Papers | Contributor(s): Donald E. Amos
This paper derives equations which describe transient temperature distributions in adjacent regions which share a common boundary. These regions consist of materials with distinct, constant...
MOSFET Design Calculations - Step 3
01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...
MOSFET Design Calculations - Step 3 (Instructor Copy)
Quantum Dot based Photonic Devices
01 Apr 2012 | Online Presentations | Contributor(s): Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region of
photonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations
25 Mar 2012 | Papers | Contributor(s): Che-Sheng Chung
A self-consistent calculation establishes a bulk built-in potential by applying a DC bias to a gate/insulators/semiconductor (GIS) structure of a
NEMO5 Materials Database
25 Mar 2012 | Downloads
Revision 21229 for use on Conte August 4th, 2015
Viktor Glushkov - Pioneer of Cybernetics
19 Mar 2012 | Teaching Materials | Contributor(s): Yuri A Kruglyak
Presentation slides of seminar given for students of Faculty for computer sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak.
Carbon NanoTubes: Structure - Properties - Applications
Presentation slides for seminar given for students of Faculty of Computer Sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak on May 22, 2008.
Green's Functions For Heat Conduction in Adjacent Materials
11 Mar 2012 | Papers | Contributor(s): Donald E. Amos
This paper considers classical linear, transient heat conduction problems set in Regions 1 and 2 defined by the half planes x>0 and x
MOSFET Design Simulation I
07 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez
MOSFET Design Simulation I (Instructor Copy)
Quantum-chemical Theory of Cumulenes - perspective molecular conductors for nanoelectronics
07 Mar 2012 | Papers | Contributor(s): Yuri A Kruglyak
The theory of pi-electronic structure is presented for molecules of organic cumulenes CnH4 which have two perpendicular subsystems of pi-AO. Elementary considerations from MO theory