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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown
08 Apr 2013 | | Contributor(s):: Muhammad Alam
Outline:Part 1 - Understanding Post-BD FET behaviorBD position determinationHard and Soft BD in FETsDistinguishing leakage and intrinsic FET parameters shiftsPart 2 - Impact of breakdown on digital circuit operationBD in ring oscillatorBDinSR AMcellTiming, BD into soft node
ECE 695A Lecture 29: Breakdown of Thick Dielectrics
Outline:IntroductionSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleConclusions
ECE 695A Lecture 27R: Review Questions
29 Mar 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains
28 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions
ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)
Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions
ECE 695A Lecture 26R: Review Questions
Carbon-Based Nanoswitch Logic
28 Mar 2013 | | Contributor(s):: Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...
ECE 595E Lecture 23: Electronic Bandstructures
27 Mar 2013 | | Contributor(s):: Peter Bermel
Outline:3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs
ECE 695A Lecture 25R: Review Questions
27 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...
Empirical Tight-binding Parameterization of SmSe in the sp3d5f7s* model
26 Mar 2013 | | Contributor(s):: Zhengping Jiang, Marcelo Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy Boykin, Tillmann Christoph Kubis, Gerhard Klimeck, Glenn J. Martyna
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters.The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power...
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions
ECE 695A Lecture 24R: Review Questions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions
ECE 595E Lecture 21: 3D Bandstructures
19 Mar 2013 | | Contributor(s):: Peter Bermel
Outline:Recap from MondayBandstructure Symmetries2D Photonic BandstructuresPeriodic Dielectric WaveguidesPhotonic Crystal Slabs
ECE 595E Lecture 24: Electronic Bandstructure Simulation Tools
Outline:Electronic bandstructure labBasic PrinciplesInput InterfaceExemplary OutputsDensity functional theory (DFT)DFT in Quantum ESPRESSO
ECE 695A Lecture 23R: Review Questions
19 Mar 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 22R: Review Questions
ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
NEMO5 Latest Version Source
19 Mar 2013 | | Contributor(s):: James Fonseca, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier
Revision 24185 uploaded on December 16th, 2016.Revision 23455 updated on August 8th, 2016 Revision 21229 updated on Sept 2, 2015. Use this if you want to build NEMO5 from source.
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...