Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Resources (201-220 of 1871)

  1. ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Part 1 - Understanding Post-BD FET behaviorBD position determinationHard and Soft BD in FETsDistinguishing leakage and intrinsic FET parameters shiftsPart 2 - Impact of breakdown on digital circuit operationBD in ring oscillatorBDinSR AMcellTiming, BD into soft node

  2. ECE 695A Lecture 29: Breakdown of Thick Dielectrics

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleConclusions 

  3. ECE 695A Lecture 27R: Review Questions

    29 Mar 2013 | | Contributor(s):: Muhammad Alam

  4. ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions

  5. ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions

  6. ECE 695A Lecture 26R: Review Questions

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

  7. Carbon-Based Nanoswitch Logic

    28 Mar 2013 | | Contributor(s):: Stephen A. Campbell

    This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...

  8. ECE 595E Lecture 23: Electronic Bandstructures

    27 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs

  9. ECE 695A Lecture 25R: Review Questions

    27 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...

  10. Empirical Tight-binding Parameterization of SmSe in the sp3d5f7s* model

    26 Mar 2013 | | Contributor(s):: Zhengping Jiang, Marcelo Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy Boykin, Tillmann Christoph Kubis, Gerhard Klimeck, Glenn J. Martyna

    The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters.The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power...

  11. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions

  12. ECE 695A Lecture 24R: Review Questions

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

  13. ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions

  14. ECE 595E Lecture 21: 3D Bandstructures

    19 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from MondayBandstructure Symmetries2D Photonic BandstructuresPeriodic Dielectric WaveguidesPhotonic Crystal Slabs

  15. ECE 595E Lecture 24: Electronic Bandstructure Simulation Tools

    19 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Electronic bandstructure labBasic PrinciplesInput InterfaceExemplary OutputsDensity functional theory (DFT)DFT in Quantum ESPRESSO

  16. ECE 695A Lecture 23R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  17. ECE 695A Lecture 22R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  18. ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  19. NEMO5 Latest Version Source

    19 Mar 2013 | | Contributor(s):: James Fonseca, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier

    Revision 24185 uploaded on December 16th, 2016.Revision 23455 updated on August 8th, 2016 Revision 21229 updated on Sept 2, 2015. Use this if you want to build NEMO5 from source. 

  20. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...