Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Resources (221-240 of 1873)

  1. NEMO5 Latest Version Source

    19 Mar 2013 | | Contributor(s):: James Fonseca, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier

    Revision 24185 uploaded on December 16th, 2016.Revision 23455 updated on August 8th, 2016 Revision 21229 updated on Sept 2, 2015. Use this if you want to build NEMO5 from source. 

  2. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

  3. ECE 595E Lecture 22: Full 3D Bandgaps

    06 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from Wednesday3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs

  4. ECE 595E Lecture 20: Bandstructure Concepts

    06 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from FridayBandstructure Problem FormulationBloch’s TheoremReciprocal Lattice SpaceNumerical Solutions1D crystal2D triangular lattice3D diamond lattice

  5. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions

  6. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

  7. ECE 695A Lecture 19R: Review Questions

    04 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between...

  8. ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance

    01 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Importance of measuring interface damageElectronicSpinResonance( Aquickreview)Spin Dependent RecombinationElectrically detected spin-resonance and noise- spectroscopyComparing the approachesConclusions

  9. ECE 695A Lecture 17R: Review Questions

    01 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...

  10. ECE 695A Lecture 18R: Review Questions

    01 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...

  11. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

    25 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions

  12. ECE 695A Lecture 16: Review Questions

    22 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly...

  13. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | | Contributor(s):: Muhammad Alam

  14. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...

  15. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices

  16. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices

  17. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...

  18. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions

  19. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions

  20. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions