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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Drift-Diffusion Model, Part C: Sharfetter-Gummel, Time-Dependent Simulations
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12 Jun 2006 | Online Presentations | Contributor(s): Dragica Vasileska
Drift-Diffusion Model, Part B: Solution Details
09 Jun 2006 | Online Presentations | Contributor(s): Dragica Vasileska
Drift-Diffusion Model, Part A: Introduction
07 Jun 2006 | Online Presentations | Contributor(s): Dragica Vasileska
NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | Online Presentations | Contributor(s): Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture...
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05 Jun 2006 | Online Presentations | Contributor(s): Dragica Vasileska
Solid-State Theory and Semiconductor Transport Fundamentals
Choice of the Distribution Function
Empirical Pseudopotential Method Description
4.5 out of 5 stars
Simplified Band-Structure Model
Introduction to Computational Electronics
What Is Computational Electronics and Why Do We Need It?
05 Jun 2006 | Courses | Contributor(s): Dragica Vasileska
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device...
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01 Jun 2006 | Tools | Contributor(s): Marcelo Alejandro Kuroda, Salvador Barraza-Lopez, J. P. Leburton
Calculates the phonon band structure of carbon nanotubes using the force constant method.
Logic Devices and Circuits on Carbon Nanotubes
23 May 2006 | Online Presentations | Contributor(s): Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...
ECE 659 Lecture 34: Non-Coherent Transport: Why does an Atom Emit Light?
23 May 2006 | Online Presentations | Contributor(s): Supriyo Datta
Reference Chapter 10.1
ECE 659 Lecture 4: Charging/Coulomb Blockade
22 May 2006 | Online Presentations | Contributor(s): Supriyo Datta
Reference Chapter 1.4 and 1.5
ECE 659 Lecture 3: The Quantum of Conductance
Reference Chapter 1.3
Exploring New Channel Materials for Nanoscale CMOS
21 May 2006 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
19 May 2006 | Tools | Contributor(s): Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution