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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
0.0 out of 5 stars
30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
ECE 612 Lecture 20: MOSFET Leakage
30 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Electrical Resistance: an Atomistic View
26 Oct 2006 | Papers | Contributor(s): Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting
from something really small, like a molecule, and then discussing the issues that
arise as we move to bigger...
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
4.5 out of 5 stars
19 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and
much more that we now take for granted. Moore's Law, posited by...
5.0 out of 5 stars
19 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
Integrated Circuit Fabrication Process Simulation
Process Lab: Oxidation Flux
This module simulates the oxidation flux.
Modeling of Nanoscale Devices
19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
A Primer on Quantum Computing
18 Oct 2006 | Online Presentations | Contributor(s): David D. Nolte
Quantum computers would represent an exponential increase in computing
power...if they can be built. This tutorial describes the theoretical
background to quantum computing, its potential for...
ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 17: Device Scaling
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 | Papers | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of...
ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility