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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
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06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea...
ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 8: MOSFET IV, Part II
ECE 612 Lecture 10: The Ballistic MOSFET
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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
Nanoscale Device Modeling: From MOSFETs to Molecules
21 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
21 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we...
Quantum Transport for Nanostructures
17 Sep 2006 | Papers | Contributor(s): Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff
and Baym allow ones to study the time evolution of a many-particle quantum sys-
tem. Knowing the 1-particle...
ECE 612 Lecture 7: MOSFET IV, Part I
12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 6: Quantum Mechanical Effects
ECE 612 Lecture 9: MOSFET IV, Part III
ECE 612 Lecture 5: Poly Si Gate MOS Capacitors
08 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 4: MOS Capacitors
05 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Modeling Interface-defect Generation (MIG)
4.0 out of 5 stars
28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI
28 Aug 2006 | Online Presentations | Contributor(s): Greg Snider
Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at...