
A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006  Papers  Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
assessing its...
http://nanohub.org/resources/1926

ECE 612 Lecture 20: MOSFET Leakage
30 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1899

Electrical Resistance: an Atomistic View
26 Oct 2006  Papers  Contributor(s): Supriyo Datta
This tutorial article presents a “bottomup” view of electrical resistance starting
from something really small, like a molecule, and then discussing the issues that
arise as we move to bigger...
http://nanohub.org/resources/1919

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
implementation of...
http://nanohub.org/resources/1917

Nanoelectronics 101
19 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and
much more that we now take for granted. Moore's Law, posited by...
http://nanohub.org/resources/1737

Process Lab:Oxidation
19 Oct 2006  Tools  Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
Integrated Circuit Fabrication Process Simulation
http://nanohub.org/resources/prolabox

Process Lab: Oxidation Flux
19 Oct 2006  Tools  Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
This module simulates the oxidation flux.
http://nanohub.org/resources/prolaboxflux

Modeling of Nanoscale Devices
19 Oct 2006  Papers  Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
http://nanohub.org/resources/1902

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006  Papers  Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
http://nanohub.org/resources/1900

A Primer on Quantum Computing
18 Oct 2006  Online Presentations  Contributor(s): David D. Nolte
Quantum computers would represent an exponential increase in computing
power...if they can be built. This tutorial describes the theoretical
background to quantum computing, its potential for...
http://nanohub.org/resources/1897

ECE 612 Lecture 19: Series Resistance
17 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1894

ECE 612 Lecture 18: VT Engineering
17 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1891

ECE 612 Lecture 17: Device Scaling
17 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1888

The Limits of CMOS Scaling from a PowerConstrained Technology Optimization Perspective
17 Oct 2006  Online Presentations  Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
http://nanohub.org/resources/1883

ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
16 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1855

Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006  Papers  Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require...
http://nanohub.org/resources/1877

nanoMOS 2.0: A Two Dimensional Simulator for Quantum Transport in DoubleGate MOSFETs
06 Oct 2006  Papers  Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of...
http://nanohub.org/resources/1875

ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1865

ECE 612 Lecture 15: 2D Electrostatics, Part I
02 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1861

ECE 612 Lecture 14: Effective Mobility
02 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1858