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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Modeling of Nanoscale Devices
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19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
A Primer on Quantum Computing
18 Oct 2006 | Online Presentations | Contributor(s): David D. Nolte
Quantum computers would represent an exponential increase in computing
power...if they can be built. This tutorial describes the theoretical
background to quantum computing, its potential for...
ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 17: Device Scaling
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
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17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 | Papers | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of...
ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 8: MOSFET IV, Part II
ECE 612 Lecture 10: The Ballistic MOSFET
ECE 612 Lecture 11: The Quasi-ballistic MOSFET
Nanoscale Device Modeling: From MOSFETs to Molecules
21 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred...