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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
16 Jun 2006 | | Contributor(s):: , Zhi Tang, huijuan zhao, Narayan Aluru
Compute the strain effects on the thermal properties of bulk crystalline silicon
15 Jun 2006 | | Contributor(s):: Gang Li, yang xu, Narayan Aluru
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
Introduction to DD Modeling with PADRE
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02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Silvaco/PADRE Description and Application to Device Simulation
Drift-Diffusion Model, Mobility Modeling
Drift-Diffusion Model, Part C: Sharfetter-Gummel, Time-Dependent Simulations
Drift-Diffusion Model, Part B: Solution Details
Drift-Diffusion Model, Part A: Introduction
NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | | Contributor(s):: Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...
Solid-State Theory and Semiconductor Transport Fundamentals
Choice of the Distribution Function
Empirical Pseudopotential Method Description
Simplified Band-Structure Model
Introduction to Computational Electronics
What Is Computational Electronics and Why Do We Need It?
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and...
30 May 2006 | | Contributor(s):: Marcelo Kuroda, Salvador Barraza-Lopez,
Calculates the phonon band structure of carbon nanotubes using the force constant method.
Logic Devices and Circuits on Carbon Nanotubes
05 Apr 2006 | | Contributor(s):: Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect...
ECE 659 Lecture 34: Non-Coherent Transport: Why does an Atom Emit Light?
16 Apr 2003 | | Contributor(s):: Supriyo Datta
Reference Chapter 10.1
ECE 659 Lecture 4: Charging/Coulomb Blockade
22 Jan 2003 | | Contributor(s):: Supriyo Datta
Reference Chapter 1.4 and 1.5