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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 659 Lecture 1: Energy Level Diagram
5.0 out of 5 stars
16 May 2006 | Online Presentations | Contributor(s): Supriyo Datta
Switching Energy in CMOS Logic: How far are we from physical limit?
24 Apr 2006 | Online Presentations | Contributor(s): Saibal Mukhopadhyay
Aggressive scaling of CMOS devices in technology generation has resulted in exponential growth in device performance, integration density and computing power. However, the power dissipated by a...
Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
0.0 out of 5 stars
20 Apr 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into...
11 Apr 2006 | Online Presentations | Contributor(s): R. Fabian Pease
Nanotechnology comprises the techniques for making things small (<100 nm)
— i.e., nanopatterning — and the resulting applications, ranging from the results of
3.5 out of 5 stars
06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
Modeling Single and Dual-Gate Capacitors using SCHRED
31 Mar 2006 | Series | Contributor(s): Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many...
4.0 out of 5 stars
30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
Metal Oxide Nanowires: Synthesis, Characterization and Device Applications
17 Mar 2006 | Online Presentations | Contributor(s): Jia Grace Lu
Various metal oxide nanowires, such as ZnO, SnO2, Fe2O3, In2O3 and Ga2O3, have been synthesized by chemical vapor deposition method. Their structures and properties are
characterized by TEM,...
1.5 out of 5 stars
14 Feb 2006 | Tools | Contributor(s): Baudilio Tejerina
Quantum Chemsitry Lab: Ab Initio and DFT molecular and electronic structure calculations of small molecules
Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
4.5 out of 5 stars
13 Feb 2006 | Online Presentations | Contributor(s): Mark A. Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow...
Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)
13 Feb 2006 | Online Presentations | Contributor(s): peide ye
Atomic layer deposition (ALD) is an emerging nanotechnology enables the deposit of ultrathin films, one atomic layer by one atomic layer. ALD provides a powerful, new capability to grow or regrow...
09 Feb 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Quantum-dot Cellular Automata (QCA) - Memory Cells
03 Feb 2006 | Animations | Contributor(s): John C. Bean
Scientists and engineers are looking for completely different ways of storing and analyzing information. Quantum-dot Cellular Automata are one possible solution. In computers of the future,...
Quantum-dot Cellular Automata (QCA) - Logic Gates
An earlier animation described how "Quantum-dot Cellular Automata" (QCAs) could serve as memory cells and wires. This animation contnues the story by describing how QCAs can be made into MAJORITY,...
A Primer on Semiconductor Device Simulation
23 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation
tool intelligently, one must know what's "under the...
Optimization of Transistor Design for Carbon Nanotubes
21 Jan 2006 | Online Presentations | Contributor(s): Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.
Using the simulator, we show that a recently reported high-performance
CNTFET delivers a near ballistic on-current. The...
A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor
(MOSFET) shrinks into the deep sub micron regime, the device performance significantly...
12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis
A Top-Down Introduction to the NEGF Approach
11 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Homework for PN Junctions: Depletion Approximation (ECE 606)
09 Jan 2006 | Teaching Materials | Contributor(s): Muhammad A. Alam
This homework assignment is part of ECE 606 "Solid State Devices" (Purdue University). It contains 5 problems which lead students through a comparison of the depletion approximation and an exact...