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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Optimization of Transistor Design for Carbon Nanotubes
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20 Jan 2006 | | Contributor(s):: Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.Using the simulator, we show that a recently reported high-performanceCNTFET delivers a near ballistic on-current. The off-state, however, issignificantly degraded because the CNTFET operates like anon-conventional Schottky...
A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
17 Jan 2006 | | Contributor(s):: Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...
12 Jan 2006 | | Contributor(s):: Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | | Contributor(s):: Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
Homework for PN Junctions: Depletion Approximation (ECE 606)
09 Jan 2006 | | Contributor(s):: Muhammad A. Alam
This homework assignment is part of ECE 606 "Solid State Devices" (Purdue University). It contains 5 problems which lead students through a comparison of the depletion approximation and an exact solution of PN junction diodes.Students compute the exact solution by using the PN Junction Lab...
Homework for Circuit Simulation: ECE 255
08 Jan 2006 | | Contributor(s):: Gerold Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, orsometimes check their work, by using the Spice 3F4 simulator on the nanoHUB.
Homework for Monte Carlo Method: High field transport in Bulk Si
06 Jan 2006 | | Contributor(s):: Muhammad A. Alam
This homework assignment is part of ECE 656 "Electronic Transport in Semiconductors" (Purdue University). It contains 10 problems which lead students through the simulation of high-field transport in bulk silicon.
Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006 | | Contributor(s):: Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation and the exact analysis of a PN junction diode.
Resonant Tunneling Diodes: an Exercise
06 Jan 2006 | | Contributor(s):: H.-S. Philip Wong
This homework assignment was created by H.-S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises and two design problems, intended to teach students the electronic properties of resonant tunneling...
Quantum Corrections for Monte Carlo Simulation
05 Jan 2006 | | Contributor(s):: Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semi-classical simulators by adding corrections for size quantization. Monte Carlo particle simulators are good candidates, because a...
Designing Nanocomposite Materials for Solid-State Energy Conversion
10 Nov 2005 |
New materials will be necessary to break through today's performance envelopes for solid-state energy conversion devices ranging from LED-based solid-state white lamps to thermoelectric devices for solid-state refrigeration and electric power generation. The combination of recent materials...
Fundamentals of Nanoelectronics (Fall 2004)
01 Sep 2004 | | Contributor(s):: Supriyo Datta, Behtash Behinaein
Please Note: A newer version of this course is now availableand we would greatly appreciate your feedback regarding the new format and contents.Welcome to the ECE 453 lectures.The development of "nanotechnology" has made it possible to engineer material and devices on a length scale as small as...
Exercises for FETToy
11 Oct 2005 | | Contributor(s):: Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | | Contributor(s):: Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the...
Notes on the Ballistic MOSFET
08 Oct 2005 | | Contributor(s):: Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...
How Semiconductors and Transistors Work
20 Nov 2005 |
This animation shows how semiconductor crystals work and how they are used to make transistor switches.
Molecular Beam Epitaxy
16 Nov 2005 |
Microelectronic devices are made by repeating two steps: 1) Depositing a thin uniform layer of material; 2) Then using a photographic process to pattern and remove unwanted areas of that layer.
Fabrication of a MOSFET within a Microprocessor
This resource depicts the step-by-step process by which the transistors of an integrated circuit are made.
University of Puerto Rico Nanotechnology Lectures
16 Nov 2005 | | Contributor(s):: David Janes
Lectures for Nanotechnology class at the University of Puerto Rico.
Quantum Dot Lab
12 Nov 2005 | | Contributor(s):: Prasad Sarangapani, James Fonseca, Daniel F Mejia, James Charles, Woody Gilbertson, Tarek Ahmed Ameen, Hesameddin Ilatikhameneh, Andrew Roché, Lars Bjaalie, Sebastian Steiger, David Ebert, Matteo Mannino, Hong-Hyun Park, Tillmann Christoph Kubis, Michael Povolotskyi, Michael McLennan, Gerhard Klimeck
Compute the eigenstates of a particle in a box of various shapes including domes, pyramids and multilayer structures.