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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
New Frontiers in Nanocomputing
0.0 out of 5 stars
03 Nov 2005 | Series
Welcome to Frontiers in Nanocomputing, a seminar series that focuses
on systems issues for nanoelectronics. Our topic was Fundamental
Limits of Digital Computation. The questions to each...
Bandstructure in Nanoelectronics
5.0 out of 5 stars
01 Nov 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material...
FETToy 2.0 Source Code Download
3.5 out of 5 stars
27 Oct 2005 | Downloads
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy...
An Electrical Engineering Perspective on Molecular Electronics
4.0 out of 5 stars
26 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than...
Simple Theory of the Ballistic MOSFET
19 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I...
Semiconductor Interfaces at the Nanoscale
4.5 out of 5 stars
13 Oct 2005 | Online Presentations | Contributor(s): David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device...
Einstein/Bohr Debate and Quantum Computing
13 Oct 2005 | Online Presentations | Contributor(s): Karl Hess
This presentation deals with the Einstein/Bohr Debate and Quantum Computing.
Introduction to Carbon Nanotube Electronics
12 Oct 2005 | Series | Contributor(s): Susan Sinnott
Carbon nanotubes (CNT) have interesting, structure-dependent electronic properties. In particular, CNTs can be a metallic or semiconducting depending on the way in which the carbon atoms are...
Resonant Tunneling Diode Simulator
10 Oct 2005 | Tools | Contributor(s): Michael McLennan
Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport
ECE 453 Lecture 31: Broadening
10 Oct 2005 | Online Presentations | Contributor(s): Supriyo Datta
Reference Chapter 8.1
ECE 453 Lecture 32: Broadening and Lifetime
ECE 453 Lecture 33: Local Density of States
Reference Chapter 8.2
ECE 453 Lecture 36: Coherent Transport
Reference Chapter 9.1
On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
03 Oct 2005 | Online Presentations | Contributor(s): Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with...
Modeling and Simulation of Sub-Micron Thermal Transport
27 Sep 2005 | Online Presentations | Contributor(s): Jayathi Murthy
In recent years, there has been increasing interest in understanding thermal phenomena at the sub-micron scale. Applications include the thermal performance of microelectronic devices,...
26 Sep 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
Quantum Dots are man-made artificial atoms that confine electrons to a small space. As such, they have atomic-like behavior and enable the study of quantum mechanical effects on a length scale...
PN Junction Theory and Modeling
14 Sep 2005 | Series | Contributor(s): Dragica Vasileska
This set of lecture notes is intended to help students learn the basics of PN junction theory and modeling.
PN Junction Lab
12 Sep 2005 | Tools | Contributor(s): Dragica Vasileska, Matteo Mannino, Michael McLennan, Xufeng Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Benjamin P Haley
This tool enables users to explore and teach the basic concepts of P-N junction devices.
09 Sep 2005 | Tools | Contributor(s): Jing Guo, Akira Matsudaira
Computes E(k) and the density-of-states (DOS) vs. energy for a carbon nanotube
Towards Molecular Electronic Circuitry: Selective Deposition of Metals on Patterned ...
01 Sep 2005 | Online Presentations | Contributor(s): Amy Walker
We have developed a robust method by which to construct complex two- and three- dimensional structures based on controlling interfacial chemistry. This work has important applications in...