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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Amorphous Semiconductor Transport Simulator
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16 Nov 2015 | Tools | Contributor(s): Kevin Stewart
Estimate the carrier mobility in an amorphous semiconductor for thin-film transistor applications.
Time-Resolved Computational Method for Atomistic Open System Simulations
13 Nov 2015 | Online Presentations | Contributor(s): Bozidar Novakovic, Gerhard Klimeck
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015 | Online Presentations | Contributor(s): Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials,...
Simulation of Organic Solar Cell with Graphene Transparent Electrode
13 Nov 2015 | Online Presentations | Contributor(s): Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori
IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a...
Unified View of Electron and Phonon Transport
10 Nov 2015 | Online Presentations | Contributor(s): Mark Lundstrom, Jesse Maassen
A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron...
Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles
05 Nov 2015 | Online Presentations | Contributor(s): Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a...
Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices
05 Nov 2015 | Online Presentations | Contributor(s): Damien Querlioz, Adrien F. Vincent
IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design...
A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden
Multi-Scale Modeling of Metal-CNT Interfaces
03 Nov 2015 | Online Presentations | Contributor(s): Martin Claus
IWCE 2015 presentation. the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt...
From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers
02 Nov 2015 | Online Presentations | Contributor(s): Irena Knezevic
Multi-Scale Quantum Simulations of Conductive Bridging RAM
02 Nov 2015 | Online Presentations | Contributor(s): Michael Povolotskyi, nicolas onofrio, David M Guzman, Alejandro Strachan, Gerhard Klimeck
IWCE 2015 presentation.
Green Light on Germanium
02 Nov 2015 | Online Presentations | Contributor(s): peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the...
Inter-band Tunnel Transistors: Opportunities and Challenges
30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?
In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.
Lorentzian fitting tool for phonon spectral energy density and general use
26 Oct 2015 | Tools | Contributor(s): Tianli Feng, Xiulin Ruan
Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).
Dissipative Quantum Transport Using One-Particle Time-Dependent (Conditional) Wave Functions
19 Oct 2015 | Online Presentations | Contributor(s): Xavier Oriols
IWCE 2015 presentation. an effective single-particle schrodinger equation to include dissipation into quantum devices is presented. this effective equation is fully understood in the context...
Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
15 Oct 2015 | Online Presentations | Contributor(s): Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin...
NEMO5: Why must we treat topological insulator nanowires atomically?
15 Oct 2015 | Online Presentations | Contributor(s): Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis
Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels
15 Oct 2015 | Online Presentations | Contributor(s): Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact...
Self-Consistent Physical Modeling of SiOx-Based Memristor Structures
15 Oct 2015 | Online Presentations | Contributor(s): Vihar Georgiev, Toufik Sadi, Asen Asenov
IWCE 2015 presentation We employ a newly-developed three- dimensional (3D) physical simulator to study Si resistive switching nonvolatile memory (RRAM) structures. We couple a stochastic...