Support

Support Options

Submit a Support Ticket

 

Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Resources (181-200 of 1750)

  1. Semiconductor Doping

    11 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones

    Understand N-Type and P-Type Semiconductor Doping.

    http://nanohub.org/resources/semidop

  2. Impedance Adder

    28 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

    Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

    http://nanohub.org/resources/impadder

  3. Series and Parallel

    17 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

    Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.

    http://nanohub.org/resources/sandp

  4. Delta-Wye

    17 Apr 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones

    Convert from Delta to Wye configuration for resistances, and vice versa.

    http://nanohub.org/resources/deltawye

  5. Phasor

    28 Feb 2012 | Tools | Contributor(s): Stella Quinones, Robert Benjamin Post

    Visualize and understand the complex numbers represented in both rectangular and polar coordinates.

    http://nanohub.org/resources/phasor

  6. Multimeter

    10 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

    Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.

    http://nanohub.org/resources/multimeter

  7. Circuit Elements

    17 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

    Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

    http://nanohub.org/resources/circuitelements

  8. Resistor Color Code

    10 Feb 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones

    Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.

    http://nanohub.org/resources/resistorcode

  9. Neutron Induced Fission Betavoltaic Battery

    11 Apr 2012 | Papers | Contributor(s): Marvin Tan

    A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is...

    http://nanohub.org/resources/13784

  10. Theory of Heat Conduction for Two Region Problems Using Green's Functions

    03 Apr 2012 | Papers | Contributor(s): Donald E. Amos

    This paper derives equations which describe transient temperature distributions in adjacent regions which share a common boundary. These regions consist of materials with distinct, constant...

    http://nanohub.org/resources/13671

  11. MOSFET Design Calculations - Step 3

    01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13675

  12. MOSFET Design Calculations - Step 3 (Instructor Copy)

    01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/13677

  13. Quantum Dot based Photonic Devices

    01 Apr 2012 | Online Presentations | Contributor(s): Muhammad Usman

    Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region of photonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc. for the...

    http://nanohub.org/resources/13532

  14. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...

    http://nanohub.org/resources/13611

  15. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    http://nanohub.org/resources/13612

  16. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    http://nanohub.org/resources/13613

  17. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    http://nanohub.org/resources/13614

  18. Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations

    25 Mar 2012 | Papers | Contributor(s): Che-Sheng Chung

    A self-consistent calculation establishes a bulk built-in potential by applying a DC bias to a gate/insulators/semiconductor (GIS) structure of a metal–oxide–semiconductor field-effect transistor...

    http://nanohub.org/resources/13609

  19. NEMO5 Materials Database

    25 Mar 2012 | Downloads

    Revision 21229 for use on Conte August 4th, 2015   

    http://nanohub.org/resources/13606

  20. Viktor Glushkov - Pioneer of Cybernetics

    19 Mar 2012 | Teaching Materials | Contributor(s): Yuri A Kruglyak

    Presentation slides of seminar given for students of Faculty for computer sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak.

    http://nanohub.org/resources/13528

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.