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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
nanoHUB Used in Research: A One Developer/User View
18 Feb 2016 | | Contributor(s):: Dragica Vasileska
In this presentation I will give overview of selected nanoHUB tools and their potential for performing state- of-the-art research. The tools selected for this purpose include SCHRED, QuaMC2D, and OMEN nanowire/ NEMO5. ...
Progress Toward Wafer-Scale Thermionic Energy Conversion
11 Feb 2016 | | Contributor(s):: Roger T. Howe
I will provide an update on recent progress at Stanford on achieving higher efficiency, wafer-scale thermionic converters – particularly, in achieving very high thermal isolation between the cathode and the anode and in new anodes with work functions less than 1 eV.
Memory-Efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations
10 Feb 2016 | | Contributor(s):: Paul Ellinghaus
IWCE 2015 presentation. The Wigner Monte Carlo solver, using the signed-particle method, is based on the generation and annihilation of numerical particles. The memory demands of the annihilation algorithm can become exorbitant, if a high spatial resolution is used, because the entire...
Ultra-Thin Silicon Membranes and Nanowires as Nanophononic and Thermoelectric Devices
10 Feb 2016 | | Contributor(s):: Davide Donadio
IWCE 2015 presentation. Engineering silicon at the nanoscale paves the way to new applications of this cheap, abundant, and technologically and environmentally friendly material. Transistors in nanoelectronics have reached the 10 nm size limit, implying very high density but also critical issues...
Progress on Quantum Transport Simulation Using Empirical Pseudopotentials
10 Feb 2016 | | Contributor(s):: Jingtian Fang, William Gerard Hubert Vandenberghe, Massimo V Fischetti
IWCE 2015 presentation. After performing one-dimensional simulation of electron transport in narrow quantum wires without gate control in (Fang et al., 2014) and (Fu and Fischetti, 2013) using the open boundary-conditions full-band plane-wave transport formalism derived in (Fu, 2013), we now...
Wigner Function Approach to Quantum Transport in QCLs
10 Feb 2016 | | Contributor(s):: Olafur Jonasson, Irena Knezevic
IWCE 2015 presentation. Abstract and more information to be added at a later date.
IWCE 2015: Openning Remarks
10 Feb 2016 | | Contributor(s):: Gerhard Klimeck
IWCE 2015 presentation. Welcome and opening remarks for the 18th International Workshop on Computational Electronics.
Indiana: A State that Works - An Overview of Public-Private Partnerships related to Nanoelectronics, Materials, Energy Storage, and Manufacturing
10 Feb 2016 | | Contributor(s):: Ian Steff
Multiscale Modeling of Graphene-Metal Contacts
01 Feb 2016 | | Contributor(s):: T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone
IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...
Thermal Conductivity of III-V Semiconductor Superlattices
25 Jan 2016 | | Contributor(s):: Song Mei, Zlatan Aksamija, Irena Knezevic
IWCE 2015 presentation. An InGaAs/InAlAs superlattice (SL) on an InP substrate is the mainstream material system for mid- IR quantum cascade lasers (QCL). The thermal conductivity tensor of SLs is critical for energy-efficient performance of QCLs; understanding the relative importance of...
Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are...
Calculation of phonon transmission in Si/PtSi heterostructures
25 Jan 2016 | | Contributor(s):: Jung Hyun Oh, Mincheol Shin
In this work we examine the suppression of phonon transport in another example, Si and SiPt heterostructures (3D). This heterostrucure is believed to have the benefit that the electrical conductance can be kept high while the phonon propagation is suppressed due to the large acoustic impedance...
Variational Formulation of Stable Discrete k · p Models
25 Jan 2016 | | Contributor(s):: William R Frensley
IWCE 2015 presentation. the longstanding problem of spurious states in k·: ; p models of semiconductor nanostructures has been shown to be an artifact of the use of the centereddifference approximation to the gradient, and it has been shown that stable models may be constructed on...
OOMMF: Object Oriented MicroMagnetic Framework
21 Jan 2016 | | Contributor(s):: Michael Joseph Donahue, Donald Gene Porter
A portable, extensible public domain program and associated tools for micromagnetic simulation
Spectral phonon relaxation time calculation tool by using normal mode analysis based on molecular dynamics
19 Jan 2016 | | Contributor(s):: Tianli Feng, Divya Chalise, Xiulin Ruan
Calculate the spectral phonon relaxation time in solids based on molecular dynamics.
nanoHUB - Educational Tour de Force
14 Jan 2016 | | Contributor(s):: David K. Ferry
nanoHUB was originally created to bring together the computational electronics world as a place where programs and results could be efficiently shared. For that purpose, it has matured and grown to where it is a major force in the area. But, it can also be a great tool for education, an...
nanoHUB Citations: Co-author Network Generator
06 Mar 2013 | | Contributor(s):: Hanjun Xian
Generate the co-author network based on all scholarly citations of nanoHUB
Advanced Thermoelectric Power Generation Simulator for Waste Heat Recovery and Energy Harvesting
30 Jun 2015 | | Contributor(s):: Je-Hyeong Bahk, Kevin Margatan, Kaz Yazawa, Ali Shakouri
Tool to simulate thermoelectric power generation device/system with temperature-dependent material properties for waste heat recovery and wearable energy harvesting
Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
16 Dec 2015 | | Contributor(s):: Xinia Meshik, Min S. Choi, Mitra Dutta, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological electrolyte and its application on retinal horizontal cells are presented.
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
16 Dec 2015 | | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm...