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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 11: Temperature Dependence of NBTI
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07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Review: Temperature activation NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation energy Conclusion
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Outline: Background: Time-dependent degradation The Reaction-Diffusion model Approximate solution to R-D model in stress phase Degradation free transistors Conclusions
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Strain in materials/origin of defects Examples: bulk defects Examples: interface defects Measurements Conclusions
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Outline: Qualitative observations Time, voltage, temperature dependencies Material dependence Circuit implications
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena? What does it mean that a process is thermally activated? What is the difference between parametric failure and catastrophic failure? Give …
ECE 695A Lecture 5: Amorphous Material/Interfaces
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Amorphous vs. crystalline materials Defect-free amorphous material Origin of defects (Maxwell’s relation) Conclusions
ECE 695A Lecture 7: Trapping in Pre-existing Traps
Outline: Pre-existing vs. stress-induced traps Voltage-shift in pre-existing bulk/interface traps Random Telegraph Noise, 1/f noise Conclusion
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Review Questions: Why are there more types of defects in crystals than in amorphous material? From the perspective of Maxwell’s relation, how does H reduce defect density? Why is HfO2 so …
An Overview of Fourth Fundamental Circuit Element- 'The Memristor'
22 Jan 2013 | Publications | Contributor(s): Tukaram Dattatray Dongale
The fourth fundamental circuit element- Memristor, was mathematically predicted by Prof. Leon Chua in his seminal research paper in IEEE Transaction on Circuit Theory on the symmetric background. …
Exciton Annihilation Simulator
12 Dec 2012 | Tools | Contributor(s): Michael Heiber
Simulates exciton-exciton annihilation behavior of polymer semiconductors measured by pump-probe spectroscopy
ECE 695A Lecture 3: Reliability as a Threshold Problem
16 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Reliability as a Threshold Problem: Empirical vs. Physical Models ‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distribution Four elements of …
ECE 695A Lecture 4: Structures and Defects in Crystals
Outline: Background information Defect-free crystal structures Defects in crystals Conclusions
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a …
ECE 695A Lecture 2: A Brief History of Reliability and Types of Reliability Models
Outline: Reliability as a General Phenomena A Brief History of Reliability Approaches to Reliability Physics Conclusions
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline: Evolving Landscape of Electronics Performance, Variability, and Reliability Classification of Reliability Course Information Conclusions
Excited State Spectroscopy of a Quantum Dot Molecule
16 Dec 2011 | Online Presentations | Contributor(s): Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed …
The Single-Atom Transistor: How it was created and what it may mean for the future
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Professor Gerhard Klimeck will be coming to speak on his research with single atom transistors.
Engineering Disorder in Opto-Electronics
30 Nov 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency …
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.