Tags: nanoelectronics

More tags

Description

This list is a starting point for nanoHUB users interested in the broad area of nanoelectronics. It is a comprehensive list of available resources. More information on Nanoelectronics can be found here.

Resources (1761-1780 of 2028)

  1. Introduction to the Keldysh Nonequilibrium Green Function Technique

    out of 5 stars 

    06 Oct 2006 | | Contributor(s):: A. P. Jauho

    Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1].The...

  2. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    out of 5 stars 

    06 Oct 2006 | | Contributor(s):: Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

  3. ECE 612 Lecture 16: 2D Electrostatics, Part II

    out of 5 stars 

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  4. ECE 612 Lecture 15: 2D Electrostatics, Part I

    out of 5 stars 

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  5. ECE 612 Lecture 14: Effective Mobility

    out of 5 stars 

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  6. Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

    out of 5 stars 

    28 Sep 2006 | | Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

    In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...

  7. Device Physics and Simulation of Silicon Nanowire Transistors

    out of 5 stars 

    28 Sep 2006 | | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  8. ECE 612 Lecture 12: Subthreshold Conduction

    out of 5 stars 

    25 Sep 2006 | | Contributor(s):: Mark Lundstrom

  9. ECE 612 Lecture 8: MOSFET IV, Part II

    out of 5 stars 

    11 Sep 2006 | | Contributor(s):: Mark Lundstrom

  10. ECE 612 Lecture 10: The Ballistic MOSFET

    out of 5 stars 

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  11. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    out of 5 stars 

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  12. Nanoscale Device Modeling: From MOSFETs to Molecules

    out of 5 stars 

    20 Sep 2006 | | Contributor(s):: Prashant Subhash Damle

    This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...

  13. Towards Multi-Scale Modeling of Carbon Nanotube Transistors

    out of 5 stars 

    20 Sep 2006 | | Contributor(s):: Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

    Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...

  14. Quantum Transport for Nanostructures

    out of 5 stars 

    17 Sep 2006 | | Contributor(s):: Mathieu Luisier

    Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or...

  15. ECE 612 Lecture 7: MOSFET IV, Part I

    out of 5 stars 

    11 Sep 2006 | | Contributor(s):: Mark Lundstrom

  16. ECE 612 Lecture 6: Quantum Mechanical Effects

    out of 5 stars 

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  17. ECE 612 Lecture 9: MOSFET IV, Part III

    out of 5 stars 

    12 Sep 2006 | | Contributor(s):: Mark Lundstrom

  18. ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

    out of 5 stars 

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  19. ECE 612 Lecture 4: MOS Capacitors

    out of 5 stars 

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  20. Modeling Interface-defect Generation (MIG)

    out of 5 stars 

    18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI