Tags: nanoelectronics

Description

This list is a starting point for nanoHUB users interested in the broad area of nanoelectronics. It is a comprehensive list of available resources. More information on Nanoelectronics can be found here.

Resources (61-80 of 2028)

  1. FDNS21: Disorder and Defects in van der Waals Heterostructures

    11 May 2021 | | Contributor(s):: Daniel A Rhodes

  2. FDNS21: Realizing 2D Transport in 2D Van der Waals Crystals

    27 Apr 2021 | | Contributor(s):: Jiwoong Park

  3. FDNS21: Artificial van der Waals Crystals

    27 Apr 2021 | | Contributor(s):: Cheol-Joo Kim

  4. nanoHUB MuGFET Tool Tutorial

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    This is a basic tutorial on how to use the nanohub MuGFET tool to simulate FinFET or double gate model free of cost.

  5. Short Channel Effects

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here are the all short channel effects that you require.

  6. Concept of FinFET Part-I

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here is the video introducing latest transistor technology used in processors.

  7. Concept of FinFET Part-II

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here is the video introducing latest transistor technology used in processors.

  8. Short Course on FinFET Simulation using MuGFET

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    This short course present how to use nanohub MuGFET tool to simulate FinFET or double gate model. It provides a short background on FinFET followed by instructions on how to use the MuGFET tool for the FinFET simulation.

  9. MIT Atomic-Scale Modeling Toolkit

    15 Jan 2008 | | Contributor(s):: David Strubbe, Enrique Guerrero, daniel richards, Elif Ertekin, Jeffrey C Grossman, Justin Riley

    Tools for Atomic-Scale Modeling

  10. 2DFET

    18 Feb 2021 | | Contributor(s):: Ning Yang, Tong Wu, Jing Guo

    Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.

  11. DFT Results Explorer

    04 Oct 2020 | | Contributor(s):: Saaketh Desai, Juan Carlos Verduzco Gastelum, Daniel Mejia, Alejandro Strachan

    Use visualization tools to explore correlations in a DFT simulation results database

  12. Recursive algorithm for NEGF in Python GPU version

    02 Feb 2021 | | Contributor(s):: Ning Yang, Tong Wu, Jing Guo

    This folder contains two Python functions for GPU-accelerated simulation, which implements the recursive algorithm in the non-equilibrium Green’s function (NEGF) formalism. Compared to the matlab implementation [1], the GPU version allows massive parallel running over many cores on GPU...

  13. pntoy using simtool infrastructure

    02 Feb 2021 | | Contributor(s):: Daniel Mejia

    PNJunction Simtool

  14. Heat Transfer Quiz 1

    01 Feb 2021 | | Contributor(s):: Kunal Dixit

    Diagnostic Heat Transfer Quiz 1

  15. MOSFET Design

    12 Jan 2021 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  16. Thermal Conductivity Simulator

    03 Dec 2020 | | Contributor(s):: Md Shajedul Hoque Thakur, Md Mahbubul Islam

    Simulate thermal conductivity of Silicon using reverse non-equilibrium molecular dynamics simulations.

  17. Compact NEGF-Based Solver for Double-Gate MOSFETs

    17 Nov 2020 | | Contributor(s):: Fabian Hosenfeld, Alexander Kloes

    Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.

  18. A Single Atom Transistor: The Ultimate Scaling Limit – Entry into Quantum Computing

    14 Oct 2020 | | Contributor(s):: Gerhard Klimeck

    50th European Solid-State Device Research Conference

  19. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

    14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

    We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

  20. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

    21 Sep 2020 | | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

    The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.