Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Resources (181-200 of 1871)

  1. Guidelines for Writing NEEDS-certified Verilog-A Compact Models

    19 Jun 2013 | | Contributor(s):: Tianshi Wang, Jaijeet Roychowdhury

    This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional guidelines for writing Verilog-A models, see the presentation by Drs. Geoffrey Coram and Colin McAndrew.

  2. NEEDS Introduction

    19 Jun 2013 | | Contributor(s):: Mark Lundstrom

    NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems – physics-based compact models for...

  3. NEEDS Workshop on Compact Modeling

    19 Jun 2013 | | Contributor(s):: Mark Lundstrom, Jaijeet Roychowdhury

    Advanced inresearch promise a new era of electronics – one that harnesses the capabilities of novel nano-­‐engineered materials and devices either alone or in conjunction with powerful silicon platforms. Compact models connect basic work on materials and device physics to circuits and systems....

  4. Verilog-A: Present Status and Guidelines

    19 Jun 2013 | | Contributor(s):: Geoffrey Coram

    Verilog-A is the standard language for compact model development and implementation.This talk provides some background on the rationale for and development of Verilog-A,summarizes the current status of the language, and provides a short introduction andsome tips for writing good compact models...

  5. nanoWind Installation files

    10 Jun 2013 | | Contributor(s):: Tianwei Liu, Joseph M. Cychosz

    nanoWind is a Microsoft Office 2007 plugin designed to generate scripts for HUBpresenter using Final Cut XML, PowerPoint voice-narration or Adobe Presenter Project(aka. Breeze).

  6. TEM Lattice Calculator

    17 May 2013 | | Contributor(s):: Jamie Teherani

    Calculate the lattice constant as a function of position from a TEM through Fourier analysis.

  7. ECE 695A Lecture 37: Radiation Induced Damage – An overview

    20 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Introduction and short history of radiation damageRadiation damage in various types of componentsSources of radiationA basic calculation and simulation approachesConclusions

  8. ECE 695A Lecture 37R: Review Questions

    20 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Why is SOI more radiation hard compared to bulk devices? What do you feel about radiation hardness of FINFET?What type of radiation issues could arise for thin-body devices like FINFET?What is error correction code? Why does it correct for MBU?What is the difference between SEE...

  9. ECE 695A Lecture 33: Model Selection/Goodness of Fit

    18 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:The problem of matching data with theoretical distributionParameter extractions: Moments, linear regression, maximum likelihoodGoodness of fit: Residual, Pearson, Cox, AkikaConclusion

  10. ECE 695A Lecture 33R: Review Questions

    18 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:With higher number of model parameters, you can always get a good fit – why should you minimize the number of parametersLeast square method is a subset of maximum likelihood approach to data fitting. Is this statement correct?What aspect of the distribution function does...

  11. ECE 695A Lecture 32R: Review Questions

    17 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Why do people use Normal, log-normal, Weibull distributions when they do not know the exact physical distribution?What is the problem of using empirical distributions? What are the advantages?If you must choose an empirical distribution, what should be your criteria? (Nos. of...

  12. ECE 695A Lecture 32: Physical vs. Empirical Distribution

    17 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Physical Vs. empirical distributionProperties of classical distribution functionMoment-based fitting of dataConclusions

  13. ECE 695A Lecture 31R: Review Questions

    15 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the difference between parametric estimation vs. non-parametric estimation?What principle did Tacho Brahe’s approach assume?What is the difference between population and sample? When we collect data for TDDB or NBTI, what type of data are we collecting?What problem does...

  14. ECE 695A Lecture 31: Collecting and Plotting Data

    15 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Origin of data, Field Acceleration vs. Statistical InferenceNonparametric informationPreparing data for projection: Hazen formula Preparing data for projection: Kaplan formulaConclusion

  15. ECE 695A Lecture 31A: Appendix - Bootstrap Method Introduction

    15 Apr 2013 | | Contributor(s):: Muhammad Alam

  16. Exciton Dynamics Simulator

    31 Dec 2012 | | Contributor(s):: Michael Heiber

    Simulates the exciton dynamics in organic photovolatic devices

  17. ECE 695A Lecture 30R: Review Questions

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:What is the difference between extrinsic vs. intrinsic breakdown?Does gas dielectric have extrinsic breakdown? Why or why not?What does ESD damage and the plasma damage to thin oxides?Can you explain the physical meaning of infant mortality ? How does it relate to yield of semiconductor...

  18. ECE 695A Lecture 30: Breakdown in Dielectrics with Defects

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  19. ECE 695A Lecture 29R: Review Questions

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Mention a few differences between thick and thin oxide breakdown.Is breakdown in thick oxides contact dominated? Can I use AHI theory here?How does the Paschen’s cascade initiate?What does it mean to have a fractal dimension of 1.7 for 2D breakdown? Why does the number suggest...

  20. ECE 695A Lecture 29A: Appendix - Dimension of a Surface

    08 Apr 2013 | | Contributor(s):: Muhammad Alam