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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Guidelines for Writing NEEDS-certified Verilog-A Compact Models
19 Jun 2013 | | Contributor(s):: Tianshi Wang, Jaijeet Roychowdhury
This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional guidelines for writing Verilog-A models, see the presentation by Drs. Geoffrey Coram and Colin McAndrew.
19 Jun 2013 | | Contributor(s):: Mark Lundstrom
NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems – physics-based compact models for...
NEEDS Workshop on Compact Modeling
19 Jun 2013 | | Contributor(s):: Mark Lundstrom, Jaijeet Roychowdhury
Advanced inresearch promise a new era of electronics – one that harnesses the capabilities of novel nano-‐engineered materials and devices either alone or in conjunction with powerful silicon platforms. Compact models connect basic work on materials and device physics to circuits and systems....
Verilog-A: Present Status and Guidelines
19 Jun 2013 | | Contributor(s):: Geoffrey Coram
Verilog-A is the standard language for compact model development and implementation.This talk provides some background on the rationale for and development of Verilog-A,summarizes the current status of the language, and provides a short introduction andsome tips for writing good compact models...
nanoWind Installation files
10 Jun 2013 | | Contributor(s):: Tianwei Liu, Joseph M. Cychosz
nanoWind is a Microsoft Office 2007 plugin designed to generate scripts for HUBpresenter using Final Cut XML, PowerPoint voice-narration or Adobe Presenter Project(aka. Breeze).
TEM Lattice Calculator
17 May 2013 | | Contributor(s):: Jamie Teherani
Calculate the lattice constant as a function of position from a TEM through Fourier analysis.
ECE 695A Lecture 37: Radiation Induced Damage – An overview
20 Apr 2013 | | Contributor(s):: Muhammad Alam
Outline:Introduction and short history of radiation damageRadiation damage in various types of componentsSources of radiationA basic calculation and simulation approachesConclusions
ECE 695A Lecture 37R: Review Questions
Review Questions:Why is SOI more radiation hard compared to bulk devices? What do you feel about radiation hardness of FINFET?What type of radiation issues could arise for thin-body devices like FINFET?What is error correction code? Why does it correct for MBU?What is the difference between SEE...
ECE 695A Lecture 33: Model Selection/Goodness of Fit
18 Apr 2013 | | Contributor(s):: Muhammad Alam
Outline:The problem of matching data with theoretical distributionParameter extractions: Moments, linear regression, maximum likelihoodGoodness of fit: Residual, Pearson, Cox, AkikaConclusion
ECE 695A Lecture 33R: Review Questions
Review Questions:With higher number of model parameters, you can always get a good fit – why should you minimize the number of parametersLeast square method is a subset of maximum likelihood approach to data fitting. Is this statement correct?What aspect of the distribution function does...
ECE 695A Lecture 32R: Review Questions
17 Apr 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Why do people use Normal, log-normal, Weibull distributions when they do not know the exact physical distribution?What is the problem of using empirical distributions? What are the advantages?If you must choose an empirical distribution, what should be your criteria? (Nos. of...
ECE 695A Lecture 32: Physical vs. Empirical Distribution
Outline:Physical Vs. empirical distributionProperties of classical distribution functionMoment-based fitting of dataConclusions
ECE 695A Lecture 31R: Review Questions
15 Apr 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the difference between parametric estimation vs. non-parametric estimation?What principle did Tacho Brahe’s approach assume?What is the difference between population and sample? When we collect data for TDDB or NBTI, what type of data are we collecting?What problem does...
ECE 695A Lecture 31: Collecting and Plotting Data
Outline:Origin of data, Field Acceleration vs. Statistical InferenceNonparametric informationPreparing data for projection: Hazen formula Preparing data for projection: Kaplan formulaConclusion
ECE 695A Lecture 31A: Appendix - Bootstrap Method Introduction
Exciton Dynamics Simulator
31 Dec 2012 | | Contributor(s):: Michael Heiber
Simulates the exciton dynamics in organic photovolatic devices
ECE 695A Lecture 30R: Review Questions
08 Apr 2013 | | Contributor(s):: Muhammad Alam
Outline:What is the difference between extrinsic vs. intrinsic breakdown?Does gas dielectric have extrinsic breakdown? Why or why not?What does ESD damage and the plasma damage to thin oxides?Can you explain the physical meaning of infant mortality ? How does it relate to yield of semiconductor...
ECE 695A Lecture 30: Breakdown in Dielectrics with Defects
Outline:IntroductionTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions
ECE 695A Lecture 29R: Review Questions
Review Questions:Mention a few differences between thick and thin oxide breakdown.Is breakdown in thick oxides contact dominated? Can I use AHI theory here?How does the Paschen’s cascade initiate?What does it mean to have a fractal dimension of 1.7 for 2D breakdown? Why does the number suggest...
ECE 695A Lecture 29A: Appendix - Dimension of a Surface