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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)
29 May 2014 | | Contributor(s):: Bryan M. Wong
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.
Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization
23 Feb 2014 | | Contributor(s):: Alex Grede
Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.
RF Solid-State Vibrating Transistors
14 Feb 2014 | | Contributor(s):: Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...
Magnetic Tunnel Junction Lab
23 Sep 2013 | | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
02 Aug 2013 | | Contributor(s):: Martin Hunt, Lei Cao, Alejandro Strachan, Marisol Koslowski
A phase field approach to plastic deformation in nano crystalline materials
Efficiency Enhancement for Nanoelectronic Transport Simulations
01 Feb 2014 | | Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....
ECE 612 Lecture 9: Subthreshold Conduction
out of 5 stars
25 Jan 2014 | | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
Uniaxial and Biaxial Stress Strain Calculator for Semiconductors
16 Jan 2014 | | Contributor(s):: Jamie Teherani
Simulate stress or strain along user-defined Miller directions for arbitrary stress/strain configurations.
Linearized Boltzmann transport calculator for thermoelectric materials
11 Jul 2013 | | Contributor(s):: Je-Hyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri
Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation
Model and Algorithm Prototyping Platform
29 Sep 2013 | | Contributor(s):: Jaijeet Roychowdhury, Tianshi Wang
Model and Algorithm Prototyping Platform
Thermoelectric Power Generator System Optimization and Cost Analysis
26 Sep 2013 | | Contributor(s):: Kaz Yazawa, Kevin Margatan, Je-Hyeong Bahk, Ali Shakouri
Simulate cost and efficiency trade-off of a thermoelectric device as a function of material properties and heat transfer coefficients
17 Sep 2013 | | Contributor(s):: Kyle Conrad, Jesse Maassen, Mark Lundstrom
This tool calculates the distribution of modes, the electronic thermoelectric transport coefficients, and the lattice thermal transport properties from band structure information.
Intro to MOS-Capacitor Tool
09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
Tunnel FETs - Device Physics and Realizations
27 Jun 2013 | | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
The Road Ahead for Carbon Nanotube Transistors
09 Jul 2013 | | Contributor(s):: Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.
Thin-Film and Multi-Element Thermoelectric Devices Simulator
17 Jul 2012 | | Contributor(s):: Je-Hyeong Bahk, Megan Youngs, Zach Schaffter, Kazuaki Yazawa, Ali Shakouri
Tool to simulate both micro-scale thin-film thermoelectric devices and large-scale multi-element thermoelectric modules for cooling and power generation
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
25 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
25 Jun 2013 | | Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
25 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...