
Optimization of Transistor Design for Carbon Nanotubes
20 Jan 2006   Contributor(s):: Jing Guo
We have developed a selfconsistent atomistic simulator for CNTFETs.Using the simulator, we show that a recently reported highperformanceCNTFET delivers a near ballistic oncurrent. The offstate, however, issignificantly degraded because the CNTFET operates like anonconventional Schottky...

A 3D Quantum Simulation of Silicon Nanowire FieldEffect Transistors
17 Jan 2006   Contributor(s):: Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the shortchannel effect. The silicon nanowire fieldeffect transistor (SNWFET) isconsidered...

Padre
12 Jan 2006   Contributor(s):: Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC smallsignal analysis

A TopDown Introduction to the NEGF Approach
14 Jun 2004   Contributor(s):: Mark Lundstrom
A TopDown Introduction to the NEGF Approach

Homework for PN Junctions: Depletion Approximation (ECE 606)
09 Jan 2006   Contributor(s):: Muhammad A. Alam
This homework assignment is part of ECE 606 "Solid State Devices" (Purdue University). It contains 5 problems which lead students through a comparison of the depletion approximation and an exact solution of PN junction diodes.Students compute the exact solution by using the PN Junction Lab...

Homework for Circuit Simulation: ECE 255
08 Jan 2006   Contributor(s):: Gerold Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, orsometimes check their work, by using the Spice 3F4 simulator on the nanoHUB.

Homework for Monte Carlo Method: High field transport in Bulk Si
06 Jan 2006   Contributor(s):: Muhammad A. Alam
This homework assignment is part of ECE 656 "Electronic Transport in Semiconductors" (Purdue University). It contains 10 problems which lead students through the simulation of highfield transport in bulk silicon.

Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006   Contributor(s):: Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation and the exact analysis of a PN junction diode.

Resonant Tunneling Diodes: an Exercise
06 Jan 2006   Contributor(s):: H.S. Philip Wong
This homework assignment was created by H.S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises and two design problems, intended to teach students the electronic properties of resonant tunneling...

Quantum Corrections for Monte Carlo Simulation
05 Jan 2006   Contributor(s):: Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semiclassical simulators by adding corrections for size quantization. Monte Carlo particle simulators are good candidates, because a...

Designing Nanocomposite Materials for SolidState Energy Conversion
10 Nov 2005 
New materials will be necessary to break through today's performance envelopes for solidstate energy conversion devices ranging from LEDbased solidstate white lamps to thermoelectric devices for solidstate refrigeration and electric power generation. The combination of recent materials...

Fundamentals of Nanoelectronics (Fall 2004)
01 Sep 2004   Contributor(s):: Supriyo Datta, Behtash Behinaein
Please Note: A newer version of this course is now availableand we would greatly appreciate your feedback regarding the new format and contents.Welcome to the ECE 453 lectures.The development of "nanotechnology" has made it possible to engineer material and devices on a length scale as small as...

Exercises for FETToy
11 Oct 2005   Contributor(s):: Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.

Ballistic Nanotransistors  Learning Module
07 Dec 2005   Contributor(s):: Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the...

Notes on the Ballistic MOSFET
08 Oct 2005   Contributor(s):: Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the socalled meanfreepath, λ) is much shorter than the device. When...

How Semiconductors and Transistors Work
20 Nov 2005 
This animation shows how semiconductor crystals work and how they are used to make transistor switches.

Molecular Beam Epitaxy
16 Nov 2005 
Microelectronic devices are made by repeating two steps: 1) Depositing a thin uniform layer of material; 2) Then using a photographic process to pattern and remove unwanted areas of that layer.

Fabrication of a MOSFET within a Microprocessor
16 Nov 2005 
This resource depicts the stepbystep process by which the transistors of an integrated circuit are made.

University of Puerto Rico Nanotechnology Lectures
16 Nov 2005   Contributor(s):: David Janes
Lectures for Nanotechnology class at the University of Puerto Rico.

Quantum Dot Lab
12 Nov 2005   Contributor(s):: Prasad Sarangapani, James Fonseca, Daniel F Mejia, James Charles, Woody Gilbertson, Tarek Ahmed Ameen, Hesameddin Ilatikhameneh, Andrew Roché, Lars Bjaalie, Sebastian Steiger, David Ebert, Matteo Mannino, HongHyun Park, Tillmann Christoph Kubis, Michael Povolotskyi, Michael McLennan, Gerhard Klimeck
Compute the eigenstates of a particle in a box of various shapes including domes, pyramids and multilayer structures.