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CQT Lecture 2: Electrical Resistance - A Simple Model
30 Nov 2006 | | Contributor(s):: Supriyo Datta
Objective:To introduce a simple quantitative model for describing current flow in nanoscalestructures and relate it to well-known large scale properties like Ohm’s Law.
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CQT Lecture 1: Nanodevices and Maxwell's Demon
30 Nov 2006 | | Contributor(s):: Supriyo Datta
Objective: To illustrate the subtle interplay of dynamics and thermodynamicsthat distinguishes transport physics.
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CQT Introduction
30 Nov 2006 | | Contributor(s):: Supriyo Datta
A short overview of this series of four lectures is given.
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CQT: Concepts of Quantum Transport
30 Nov 2006 | | Contributor(s):: Supriyo Datta
Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations on Nanoelectronics and the Meaning of Resistance. How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that...
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ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 31: Heterostructure Fundamentals
08 Dec 2006 | | Contributor(s):: Mark Lundstrom
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CdTe/CdS-BASED PHOTODIODE ARRAYS VIA SELECTIVE-AREA, CLOSE-SPACED SUBLIMATION
07 Dec 2006 | | Contributor(s):: Arev Gabriel Escobedo
In this talk, the deposition of dense arrays of CdTe/CdS photodiodes, via close-spaced sublimation, is presented for the first time. The previously reported ordered polycrystalline method was used to fabricate the photodiode arrays with the feature size ranging from 1 to 2 micrometers on a pitch...
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ECE 612 Lecture 29: SOI Electrostatics
04 Dec 2006 | | Contributor(s):: Mark Lundstrom
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Design in the Nanometer Regime: Process Variation
28 Nov 2006 | | Contributor(s):: Kaushik Roy
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in...
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Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
28 Nov 2006 | | Contributor(s):: Kaushik Roy
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled...
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MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that...
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recursive algorithm for NEGF in Matlab
13 Nov 2006 | | Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...
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ECE 612 Lecture 25: CMOS Circuits, Part I I
06 Nov 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 23: CMOS Process Flow
06 Nov 2006 | | Contributor(s):: Mark Lundstrom
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NCN at Northwestern: Student Leadership Council Seminars
05 Nov 2006 | | Contributor(s):: NCN at Northwestern University
This series is organized by NCN students at Northwestern University.Speakers are invited by the Student Leadership Council to visitNorthwestern to interact with students and faculty, and to presenta research seminar on their research in Computational Nanotechnology.Significant interaction with...
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ECE 612 Lecture 24: CMOS Circuits, Part I
05 Nov 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 21: Gate resistance and Interconnects
02 Nov 2006 | | Contributor(s):: Mark Lundstrom
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demons
31 Oct 2006 | | Contributor(s):: M. E. Klausmeier-Brown, C. M. Maziar, Paul Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Improved program consists of DEMON and SDEMON
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Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
31 Oct 2006 | | Contributor(s):: POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...
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Process Lab: Defect-coupled diffusion
09 Oct 2006 | | Contributor(s):: Shuqing (Victor) Cao, Yang Liu, Peter Griffin
This tool simulates dopant diffusion coupled with point defects.