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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
A Personal Quest for Information
out of 5 stars
19 Feb 2004 |
This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental principles that govern representation, processing, and the communication of information. The specific...
Nanoelectronics and the Future of Microelectronics
22 Aug 2002 | | Contributor(s):: Mark Lundstrom
Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in new, molecular-scale devices that might complement a basic silicon platform by providing it...
Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
23 Sep 2003 | | Contributor(s):: Victor Zhirnov
Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International Technology Roadmap for Semiconductors (ITRS). A wide range of new ideas have been proposed for...
Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices
16 Oct 2003 | | Contributor(s):: Joerg Appenzeller
Recent demonstrations of high performance carbon nanotube field-effect transistors (CNFETs) highlight their potential for a future nanotube-based electronics. Besides being just a nanometer in diameter, carbon nanotubes offer intrinsic advantages if compared with silicon that are responsible for...
Quantum-dot Cellular Automata
24 Nov 2003 |
The multiple challenges presented by the problem of scaling transistor sizes are all related to the fact that transistors encode binary information by the state of a current switch. What is required is a new paradigm, still capable of providing general purpose digital computation, but which can...
Towards a Terahertz Solid State Bloch Oscillator
29 Jan 2004 |
The concepts of Bloch oscillation and Zener breakdown are fundamental to electron motion in periodic potentials and were described in the earliest theoretical developments of electron transport in solids. But only in the past 10 years have experiments clearly demonstrated various aspects of...
Molecular Electronics Pathway for Molecular Memory Devices
06 Feb 2004 |
We have been developing a scale molecular electronic device using a 30 nm sized plant virus particle as the scaffold. This talk describes the bioengineering aspects of how the virus particle is converted to a molecular electronic circuit and its electrical characterization. The talk describes...
Electronic Transport Through Self-Assembled Monolayers
25 Feb 2004 | | Contributor(s):: Takhee Lee
Characterization of charge transport in molecular scale electronic devices has to date shown exquisite sensitivity to specifics of device fabrication and preparation. Thus, intrinsic molecular band structure has been problematic to extract from published results. Here we demonstrate...
Contacting Molecules - Chemistry in Molecular Electronics
12 Apr 2004 |
The study of the basic electron transport mechanism through molecular systems has been made accessible by fabrication techniques that create metallic contacts to a small number of organic molecules. In my talk, I will discuss some of the groundbreaking discoveries such as the measurement of the...
Inelastic Effects in Molecular Conduction
12 Apr 2004 | | Contributor(s):: Abraham Nitzan
Molecular electron transfer, as treated by the Marcus theory, strongly depends on nuclear motion as a way to achieve critical configurations in which charge rearrangement is possible. The electron tunneling process itself is assumed to occur in a static nuclear environment. In the application of...
Electrical Conduction through Molecules
08 Jul 2003 | | Contributor(s):: Ferdows Zahid, Magnus Paulsson, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as...
Mini-Workshop on Carbon-Nanotube FETs
13 May 2003 |
This informal one-day workshop was intended to discuss theory, modeling, and simulation for CNT-electronics, specifically FETs. The objective was to kick off an NSF-funded project on the modeling and simulatin of CNT-electronics. A small group of experimentalists, theorists, and computational...
Resistance of a Molecule
29 Apr 2003 | | Contributor(s):: Magnus Paulsson, Ferdows Zahid, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as...
Theory of Ballistic Nanotransistors
27 Nov 2002 | | Contributor(s):: Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...