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Robust Computing Systems: From Today to the N3XT 1,000×
08 May 2019 | | Contributor(s):: Subhasish Mitra
This talk presents an overview of my group’s research in the above areas, and particularly emphasizes complexity and performance.
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Rode's Method
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Anjali Bharthuar, Umberto Ravaioli
Calculates low field mobility in III-V semiconductors
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Rode's Iterative Method
28 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
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Rode's Method: Theory and Implementation
01 Jul 2010 | | Contributor(s):: Dragica Vasileska
This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility calculation for GaAs material at different temperatures and different doping concentrations. Note that the...
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Role of Spin-Orbit Interaction and Berry's Phase in Aharonov-Bohm Oscillations
04 Mar 2009 | | Contributor(s):: Jeng-Bang (Tony) Yau
In this thesis we report the results of study on the role of spin-orbit (SO) interaction in Aharonov-Bohm (A-B) oscillations measured in (311)A GaAs two-dimensional (2D) holes, and the observed novel structures in the Fourier transform (FT) spectra of the A-B oscillations, which we interpret as...
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RTD Topic Page: Test for Resonant Tunneling Diode
13 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a test for Resonant Tunneling Diode topic page.
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RTD with NEGF Demonstration: Basic RTD Asymmetric
03 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows the analysis of a 2 barrier Resonant Tunneling Diode (RTD) over 21 bias points using RTDLab. Several powerful features of this tool are demonstrated.
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Runs for benchmarking of stress response for wires
15 Feb 2011 | | Contributor(s):: Roza Kotlyar
The directory contains runs for 3 nm Si wire for not self-consistent bandstructure without stress and with the fixed strain in the calculation.
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S-parameters
03 Aug 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of lecture notes introduces the students to the concept of s-parameters that are used for characterization of RF circuits.
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S4 Editor
19 Jul 2017 | | Contributor(s):: Martin Hunt
Edit a Lua script for the Stanford Stratified Structure Solver and visualize the output
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Scanning Probe Microscopes
15 Mar 2005 | | Contributor(s):: EPICS LSPM Team
Laura explains how scanning probe microscopes can be used to create images of small devices, molecules, and even atoms! A large-scale version of the scanning probe microscope is built out of Legos to show the basic principles.
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Scattering in NEGF: Made simple
09 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...
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Scattering Mechanisms
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Solid-State Theory and Semiconductor Transport Fundamentals
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Scattering rates of confined carriers
17 Jun 2011 | | Contributor(s):: Dragica Vasileska
Scattering rates of acoustic phonon scattering and interface roughness are described for a case of 1D confinement.
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Schottky diode - Theoretical exercises
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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Schottky-Barrier CNFET
16 Mar 2007 | | Contributor(s):: Arash Hazeghi, Tejas Krishnamohan, H.-S. Philip Wong
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers
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Schred
30 Mar 2006 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
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SCHRED Exercise: MOS Capacitor Analysis
20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to examine the influence of semiclassical and quantum-mechanical charge description on the low-frequency CV-curves. It also teaches one the influence of poly-gate depletion on the low-frequency CV-curves.
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Schred Source Code Download
09 Mar 2005 | | Contributor(s):: Dragica Vasileska, Zhibin Ren
Schred 2.0 calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the...
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Schred Tutorial Version 2.1
23 Jun 2008 | | Contributor(s):: Dragica Vasileska
This Schred tutorial [or User's Manual] is intended to help users of the Schred tool with the Rappture interface. Readers will find various examples for modeling single-gate and dual-gate capacitors with either metal or polysilicon gates. The models also use either semi-classical or...