-
A Primer on Semiconductor Device Simulation
23 Jan 2006 | | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor...
-
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
-
A Short Overview of the NEEDS Initiative
05 Jun 2016 | | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
-
A Single Atom Transistor: The Ultimate Scaling Limit – Entry into Quantum Computing
15 Sep 2020 | | Contributor(s):: Gerhard Klimeck
50th European Solid-State Device Research Conference
-
a TCAD Lab
29 Oct 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
An Assembly of TCAD tools for circuit, device, and process simulation
-
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
-
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | | Contributor(s):: Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
-
A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...
-
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
-
A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
18 Sep 2020 | | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
-
ab initio simulations with ORCA
28 Jul 2015 | | Contributor(s):: nicolas onofrio, Alejandro Strachan
ab initio and density functional theory calculations dedicated to molecular systems
-
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
-
ABACUS Bandstructure Models (Spring 2022)
04 May 2022 | | Contributor(s):: Gerhard Klimeck
In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....
-
ABACUS Bandstructure Models (Winter 2021)
08 Dec 2021 | | Contributor(s):: Gerhard Klimeck
In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers...
-
ABACUS Bipolar Junction Transistors (Spring 2022)
04 May 2022 | | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries....
-
ABACUS Bipolar Junction Transistors (Winter 2021)
08 Dec 2021 | | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles,...
-
ABACUS Drift-Diffusion-Lab with Bias and Light (Spring 2022)
04 May 2022 | | Contributor(s):: Gerhard Klimeck
In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...
-
ABACUS Drift-Diffusion-Lab with Bias and Light (Winter 2021)
08 Dec 2021 | | Contributor(s):: Gerhard Klimeck
In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...
-
ABACUS Exercise: Bandstructure – Kronig-Penney Model and Tight-Binding Exercise
20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to start with the simple Kronig-Penney model and understand formations of bands and gaps in the dispersion relation that describes the motion of carriers in 1D periodic potentials. The second exercise examines the behavior of the bands at the Brillouin zone...
-
ABACUS Exercise: Carrier Statistics
20 Jul 2010 | | Contributor(s):: Dragica Vasileska
The objective of this exercise is to derive Bose-Einstein and Maxwell-Boltzmann statistics.