
Notes on the Solution of the PoissonBoltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012   Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

MOSFET Design Calculations  Step 3
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 3 (Instructor Copy)
01 Apr 2012   Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

Viktor Glushkov  Pioneer of Cybernetics
19 Mar 2012   Contributor(s):: Yuri A Kruglyak
Presentation slides of seminar given for students of Faculty for computer sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak.

Carbon NanoTubes: Structure  Properties  Applications
19 Mar 2012   Contributor(s):: Yuri A Kruglyak
Presentation slides for seminar given for students of Faculty of Computer Sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak on May 22, 2008.

MOSFET Design Simulation I
07 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Simulation I (Instructor Copy)
07 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
05 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2
05 Mar 2012   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

C++ Programming Examples I
02 Mar 2012   Contributor(s):: David A Saenz
A set of simple C++ programming examples, from a basic Hello World to an example of the use of pointers.David Saenz, O'Reili book: Practical C++ programmingPractical C++ ProgrammingNCN Project, Purdue University

NEMO5 Manual
13 Feb 2012   Contributor(s):: James Fonseca, Sebastian Steiger
Updated Sep 2, 2015 revision 21229Uploaded Nov 11, 2014, revision 17811MetaPoissonQTBM5 solver options, uploaded Jan 29, 2014. (Click "additional materials")Device Specification for simplified device geometries uploaded Jan 30, 2014. (Click "additional materials")

MOSC VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
05 Feb 2012   Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOSCapacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

MOSC VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012   Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOSCapacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

MATLAB Tutorial
15 Aug 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck

Solid State Lightening and LEDs
15 Aug 2011   Contributor(s):: Dragica Vasileska
This lecture is part of a Computational optoelectronics class that is taught at ASU by Prof. Vasileska.

Quantum Computing  Introduction
15 Aug 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck

Quantum Computing  Experiments
15 Aug 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck

Green's Functions Method Explained
10 Aug 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a tutorial on nonequilibrium Green's functions.

Silvaco Athena  Part 3
09 Aug 2011   Contributor(s):: Dragica Vasileska
This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

1D Modeling of HgCdTe Photodetectors Operated at Low Temperatures
04 Aug 2011   Contributor(s):: pradyumna muralidharan, Dragica Vasileska
This presentation describes the capabilities of the tool OPTODET: 1D HgCdTe photodetector modeling tool.