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Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Resources (101-120 of 1741)

  1. OMEN Nanowire Test Problems

    24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.

    http://nanohub.org/resources/10515

  2. MOSCAP CV profiling

    05 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra

    This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.

    http://nanohub.org/resources/10359

  3. MOSFET Lab - Scaling

    03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

    http://nanohub.org/resources/10268

  4. MOSFET Design Calculations - Step 1

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10245

  5. PN Junctions: Simulation and Calculation of Electrostatic Variables

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones

    Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward...

    http://nanohub.org/resources/10250

  6. MOSFET Design Calculations - Step 1 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10252

  7. PN Junctions: Simulations and Calculations of Electrostatic Variables (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones

    Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward...

    http://nanohub.org/resources/10254

  8. MOSFET Design Calculations - Step 2

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10258

  9. MOSFET Design Calculations - Step 2 (Instructor Copy)

    02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET...

    http://nanohub.org/resources/10260

  10. MOSFET Worked out problems 1

    06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

    http://nanohub.org/resources/10128

  11. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...

    http://nanohub.org/resources/10024

  12. Quantum dot - Design a laser

    09 Nov 2010 | Teaching Materials | Contributor(s): SungGeun Kim

    This document is a real-life problem for the quantum dot lab tool. Basic knowledge on the operation principle of a quantum dot laser is needed to solve this test. The test requires the tested...

    http://nanohub.org/resources/9970

  13. Test for Quantum Dot Lab tool

    09 Nov 2010 | Teaching Materials | Contributor(s): SungGeun Kim, Saumitra Raj Mehrotra

    This test is aimed at self-learning students or instructors who may be engaged in teaching classes related to the quantum dot lab tool. The level of this test should not be difficult for a...

    http://nanohub.org/resources/9968

  14. ABACUS: Test for MOSFET Tool

    18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...

    http://nanohub.org/resources/9882

  15. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the...

    http://nanohub.org/resources/9841

  16. Rappturizer

    06 Oct 2010 | Teaching Materials | Contributor(s): David Alberto Saenz

    This resource is a program which helps to build simple rappture applications. The user will just have to input the information about their code and a template and XML file will be automatically...

    http://nanohub.org/resources/9798

  17. ABACUS: Test for BJT lab Tool

    06 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...

    http://nanohub.org/resources/9834

  18. Verification of the Validity of the BJT Tool

    24 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for...

    http://nanohub.org/resources/9579

  19. MOSCAP Worked out problems (Basic)

    19 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

    http://nanohub.org/resources/9575

  20. Drift Diffusion Lab Worked out problems (Drift)

    18 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.

    http://nanohub.org/resources/9556

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.