
OMEN Nanowire Test Problems
24 Jan 2011   Contributor(s):: SungGeun Kim
This test is for students who have gone through the OMEN Nanowire firsttime user guide and other learning materials related to nanowire FETs.

MOSCAP CV profiling
05 Jan 2011   Contributor(s):: Saumitra Raj Mehrotra
This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.

MOSFET Lab  Scaling
03 Jan 2011   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem

MOSFET Design Calculations  Step 1
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

PN Junctions: Simulation and Calculation of Electrostatic Variables
02 Jan 2011   Contributor(s):: Stella Quinones
Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...

MOSFET Design Calculations  Step 1 (Instructor Copy)
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

PN Junctions: Simulations and Calculations of Electrostatic Variables (Instructor Copy)
02 Jan 2011   Contributor(s):: Stella Quinones
Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...

MOSFET Design Calculations  Step 2
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Design Calculations  Step 2 (Instructor Copy)
02 Jan 2011   Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

MOSFET Worked out problems 1
06 Dec 2010   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

A methodology for SPICEcompatible modeling of nanoMOSFETs
17 Nov 2010   Contributor(s):: Alba Graciela Avila, David Espejo
An original SPICEcompatible model for Intel's 45nm HighK MOSFET is presented. It takes into account some QuantumMechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

Quantum dot  Design a laser
09 Nov 2010   Contributor(s):: SungGeun Kim
This document is a reallife problem for the quantum dot lab tool. Basic knowledge on the operation principle of a quantum dot laser is needed to solve this test. The test requires the tested person to be familar with the quantum dot lab tool.

Test for Quantum Dot Lab tool
09 Nov 2010   Contributor(s):: SungGeun Kim, Saumitra Raj Mehrotra
This test is aimed at selflearning students or instructors who may be engaged in teaching classes related to the quantum dot lab tool.The level of this test should not be difficult for a student who has gone through "the general tutorial to quantum dots,""the introductory tutorial to the...

ABACUS: Test for MOSFET Tool
18 Oct 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the MOSFET Tool
11 Oct 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on BulkCharge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

Rappturizer
06 Oct 2010   Contributor(s):: David Alberto Saenz
This resource is a program which helps to build simple rappture applications. The user will just have to input the information about their code and a template and XML file will be automatically generated for the user to just copy/paste his calculations and let the template do the rest. A...

ABACUS: Test for BJT lab Tool
06 Oct 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the BJT Tool
24 Aug 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A pnp BJT in CommonBase configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

MOSCAP Worked out problems (Basic)
19 Aug 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

Drift Diffusion Lab Worked out problems (Drift)
18 Aug 2010   Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.