MOSCAP CV profiling

05 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra

This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.

https://nanohub.org/resources/10359

MOSFET Lab - Scaling

03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

The concept of device scaling and the need to control short channel effects is used in this real life problem

https://nanohub.org/resources/10268

MOSFET Design Calculations - Step 1

02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10245

PN Junctions: Simulation and Calculation of Electrostatic Variables

02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones

Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and …

https://nanohub.org/resources/10250

MOSFET Design Calculations - Step 1 (Instructor Copy)

02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10252

PN Junctions: Simulations and Calculations of Electrostatic Variables (Instructor Copy)

02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones

Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and …

https://nanohub.org/resources/10254

MOSFET Design Calculations - Step 2

02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10258

MOSFET Design Calculations - Step 2 (Instructor Copy)

02 Jan 2011 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/10260

MOSFET Worked out problems 1

06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

https://nanohub.org/resources/10128

A methodology for SPICE-compatible modeling of nanoMOSFETs

17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), …

https://nanohub.org/resources/10024

Quantum dot - Design a laser

09 Nov 2010 | Teaching Materials | Contributor(s): SungGeun Kim

This document is a real-life problem for the quantum dot lab tool. Basic knowledge on the operation principle of a quantum dot laser is needed to solve this test. The test requires the tested person …

https://nanohub.org/resources/9970

Test for Quantum Dot Lab tool

09 Nov 2010 | Teaching Materials | Contributor(s): SungGeun Kim, Saumitra Raj Mehrotra

This test is aimed at self-learning students or instructors who may be engaged in teaching classes related to the quantum dot lab tool. The level of this test should not be difficult for a student …

https://nanohub.org/resources/9968

ABACUS: Test for MOSFET Tool

18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have …

https://nanohub.org/resources/9882

Verification of the Validity of the MOSFET Tool

11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the …

https://nanohub.org/resources/9841

Rappturizer

06 Oct 2010 | Teaching Materials | Contributor(s): David Alberto Saenz

This resource is a program which helps to build simple rappture applications. The user will just have to input the information about their code and a template and XML file will be automatically …

https://nanohub.org/resources/9798

ABACUS: Test for BJT lab Tool

06 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have …

https://nanohub.org/resources/9834

Verification of the Validity of the BJT Tool

24 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for …

https://nanohub.org/resources/9579

MOSCAP Worked out problems (Basic)

19 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

https://nanohub.org/resources/9575

Drift Diffusion Lab Worked out problems (Drift)

18 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.

https://nanohub.org/resources/9556

Drift Diffusion - Temperature Sensor

16 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The fact that mobility of a semiconductor varies with temperature is used to design a temperature sensor in this test.

https://nanohub.org/resources/9519