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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Worked Examples for Carrier Statistics (basic)
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16 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Several worked out examples are presented that illustrate the basic concept of carrier concentration in semiconductors.
ABACUS: Test for MOSCAP Tool
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have …
Worked Examples for Carrier Statistics (advanced)
Two worked out examples based on Fermi-Dirac Vs Maxwell-Boltzmann statistics and temperature effects are presented.
Drift Diffusion Lab Worked out problems (Diffusion)
A sample problem is worked out using Drift-Diffusion lab. The problem statement deals with the concept of diffusion in semiconductors.
ABACUS: Test for Drift Diffusion Lab
12 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Verification of the Validity of the Drift-Diffusion Lab Tool
11 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Drift-Diffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the …
Verification of the Validity of the MOSCap Tool
Numerical results for Surface Potential Vs Gate Bias are compared with analytical results to prove the validity of MOSCap Lab.
Carrier Statistics Tool Verification
10 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
This test verifies the Carrier Statistics Tool by comparing the numerically computed and analytically extracted, electron and hole carrier densities. The results are close within 2% of margin.
Verification of the Validity of Bulk Bandstructure Lab
10 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This set of slides compares the optical gaps for Si, Ge and GaAs with those given in www.ioffe.ru, thus verifying the validity of the bulk Bandstructure Lab tool.
ABACUS: Test for Bandstructure Lab
This is a test that examines ones understanding of electronic structure once he/she has gone through the materials and exercises provided on the nanoHUB as part of the ABACUS Bandstructure topic page …
ABACUS: Test for Carrier Statistics Tool
Carrier Statistics - Temperature Effects
Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired …
ABACUS: MOSFET - Diffusion Process
09 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
The goal of this assignment is to make familiar the students the required doses in the diffusion step of fabrication of semiconductor devices to get certain values of the volume doping densities.
ABACUS: Test for PN Junction Lab
Description of the K.P Method for Band Structure Calculation
05 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of slides describes the k.p mehod for band structure calculation.
ABACUS: Test for Crystal Viewer Tool
05 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
ABACUS: Test for Periodic Potential Lab
ABACUS: Test for PCPBT Lab
High Field Transport and the Monte Carlo Method for the Solution of the Boltzmann Transport Equation
23 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of slides first describes the path-integral solution of the BTE and then discusses in details the Monte Carlo Method for the Solution of the Boltzmann Transport Equation.
ACUTE: Hydrodynamic Modeling
This set of slides clearly explains when and where Hydrodynamic models can be used and what are their limitations.
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