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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 656 Exam 2 (Fall 2009)
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07 Dec 2009 | Teaching Materials | Contributor(s): Mark Lundstrom
Notes on Scattering and Mobility in 1D, 2D, and 3D
06 Nov 2009 | Teaching Materials | Contributor(s): Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) or quantum confined (2D and 1D) semiconductor structures. Analytical estimates are made that show the mobility in …
ECE 656 Exam 1 (Fall 2009)
08 Oct 2009 | Teaching Materials | Contributor(s): Mark Lundstrom
Computational Nanoscience for Energy
15 Sep 2009 | Teaching Materials | Contributor(s): Jeffrey C Grossman, Alexander S McLeod
Materials for energy conversion and storage can be greatly improved by taking advantage of unique effects that occur at the nanoscale. In many cases, these improvements are due to fundamental …
Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device …
From Semi-Classical to Quantum Transport Modeling: What is Computational Electronics?
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided …
From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling
From Semi-Classical to Quantum Transport Modeling: Particle-Based Device Simulations
From Semi-Classical to Quantum Transport Modeling: Quantum Corrections to Semiclassical Approaches
From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Usuki Method and Theoretical Description of Green's Functions
From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Recursive Green's function method, CBR approach and Atomistic
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to …
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to …
Exercise for MOSFET Lab: DIBL Effect
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
Exercise for MESFET: Theoretical Exercises
These theoretical exercises should help the student in understanding the operation of a MESFET device.
Exercise for MESFET: Simulation Exercise
This simulation exercise is designed to illustrate the operation of a MESFET device for different doping of the active region.
ECE 495N F08 Exam 2 (Practice)
08 Jul 2009 | Teaching Materials | Contributor(s): Supriyo Datta
ECE 495N F08 Exam 2
ECE 495N F08 Final Exam (Practice)
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.