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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Worked Examples for a PN Diode
01 Jun 2010 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
several worked examples are presented that illustrate the operation of a PN diode.
Numerical solution of the Drift-Diffusion Equations for a diode
01 Jun 2010 | Contributor(s):: Dragica Vasileska
This material describes the implementation and also gives the source code for the numerical solution of the Drift-Diffusion equations for a PN Diode. The code can be easily generalized for any 2D or 3D device.
Basics of Quantum Mechanics
Classical vs. Quantum physics, particle-wave duality, postulates of quantum mechanics
Bound States and Open Systems
bound states, open systems, transfer matrix approach, gate leakage calculation in Schottky gates
Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010 | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...
Band Structure Calculation: General Considerations
17 May 2010 | Contributor(s):: Dragica Vasileska
This set of slides explains to the users the concept of valence vs. core electrons, the implications of the adiabatic approximation on the separation of the total Hamiltonian of the system and the mean-field approximation used in ab initio bandstructure approaches. It then gives systematic...
Empirical Pseudopotential Method: Theory and Implementation
This tutorial first teaches the users the basic theory behind the Empirical Pseudopotential (EPM)Bandstructure Calculation method. Next, the implementation details of the method are described and finally a MATLAB implementation of the EPM is provided.vasileska.faculty.asu.eduNSF
Nanotechnology Animation Gallery
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...
Semiconductor Device Theory Exercises
out of 5 stars
30 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom
This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level. Crystal lattices and Miller indiciesFrom 1 well to 2 wells to 5 wells to periodic potentialsPeriodic potentials and bandstructureBandstructure...
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
03 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
Illinois ECE 440: Introduction to Crystal Properties Homework
27 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework Assignment covers basic introduction to Material Properties and Crystal Structures.
Illinois ECE 440: Charge Carrier in Bulk Semiconductors Homework
This homework covers the effects of doping on carrier concentration in bulk silicon.
Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework
This homework covers Carrier Transport in Semiconductors subjected to an electric field.
Illinois ECE 440: Diffusion and Energy Band Diagram Homework
This homework covers Diffusion of Carriers, Built-in Fields and Metal semiconductor junctions.
Illinois ECE 440: MOS Capacitor Homework
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
Illinois ECE 440: MOS Field-Effect Transistor Homework
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Illinois ECE 440: Carrier Generation and Recombination and photo-conductivity Homework
This homework covers Optical Absorption, Excess Carrier Concentration, Steady State Carrier Generation, and Quasi-Fermi Levels.
Illinois ECE 440: PN Junction Homework
This homework covers P-N junctions in equilibrium, contact potential, and Space Charge at a Junction.
Illinois ECE 440: Photodiodes Homework
This homework covers Current and Voltage in an Illuminated Junction, Solar Cells, and PN Junction Simulation.
Illinois ECE 440: znipolar Junction Transistor (BJT) Homework
This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.