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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 495N F08 Final Exam (Practice)
08 Jul 2009 | | Contributor(s):: Supriyo Datta
ECE 495N F08 Final Exam
ECE 495N F08 Exam 1 (Practice)
ECE 495N F08 Exam 1
ECE 495N F08 Homework 6 (Lectures 22-25)
ECE 495N F08 Homework 7 (Lectures 26-31)
ECE 495N F08 Homework 8 (Lectures 32-35)
ECE 495N F08 Homework 9 (Lectures 36-41)
ECE 495N F08 Homework 1 (Lectures 1-3)
07 Jul 2009 | | Contributor(s):: Supriyo Datta
ECE 495N F08 Homework 2 (Lectures 4-6)
ECE 495N F08 Homework 3 (Lectures 7-14)
ECE 495N F08 Homework 4 (Lectures 15-17)
ECE 495N F08 Homework 5 (Lectures 18-21)
MOSCAP: Theoretical Exercise - High Frequency CV Curves
07 Jul 2009 | | Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
BJT Lab: h-Parameters Calculation Exercise
07 Jul 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...
Introductory Concepts for Understanding Semiconductor Device Operation
30 Jun 2009 | | Contributor(s):: Dragica Vasileska
This set of lecture notes introduces the students to basic concepts needed for understanding semiconductor device operation.
ECE 659 S09 Exam 1 (Midterm)
24 Jun 2009 | | Contributor(s):: Supriyo Datta
ECE 659 S09 Exam 1 (Practice)
ECE 659 S09 Exam 2 (Take Home)
ECE 659 S09 Final Exam (Practice)