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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Reading Material: Tunneling
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08 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska
Energy Bands as a Function of the Geometry of the n-Well Potential: an Exercise
05 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
Explores the position and the width of the bands as a function of the 10-barrier potential parameters.
Bound States Calculation Description
05 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska
These lectures describe the calculation of the bound states in an infinite potential well, finite potential well and triangular well approximation. At the end, shooting method, that is used to...
Harmonic Oscillator Problem
These materials describe the solution of the 1D Schrodinger equation for harmonic potential using the brute-force and the operator approach.visit www.eas.asu.edu/~vasileskNSF
Can we define unique effective masses in Si nanowires?
06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the...
Tutorial on Semi-empirical Band Structure Methods
06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska
This tutorial explains in details the Empirical Pseudopotential Method for the electronic structure calculation, the tight-binding method and the k.p method. For more details on the Empirical...
Bound States Calculation: an Exercise
The problems in this exercise use the Bound States Calculation Lab to calculate bound states in an infinite square well, finite square well and triangular potential. Students also have to compare...
Exercise: Brute-force approach applied to harmonic oscillator problem and Coulomb potential in 1D
These exercises teach the students the brute-force approach for calculating bound states in harmonic and Coulomb potential.Dragica Vasileska lecture notes on Quantum Mechanics...
Exercise: Operator Approach to Harmonic Oscillator Problem
This exercise teaches the students the operator approach to solving the harmonic oscillator problem.Dragica Vasileska web site: www.eas.asu.edu/~vasileskNSF
Exercise: Density of States Function Calculation
These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF
Exercise: Dopants and Semiconductor Statistics
This exercise emphasizes the calculation of the position of the Fermi level at T=0K and it also teaches the students about Einstain relation for non-degenerate...
PN Diode Exercise: Series Resistance
An exercise in determining the series resistance in a PN diode.
Exercise: PIN Diode
An exercise in the operation of a PIN diode under the conditions of forward and reverse bias.
PN Diode Exercise: Graded Junction
An exercise in determining the preferred approach to solving the Poisson equation.
Schred: Exercise 1
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the...
SCHRED: Exercise 2
In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.www.eas.asu.edu/~vasileskNSF
Schred: Exercise 3
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description...
07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...
Towards Quantum Mechanics
07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska
This tutorial gives an overview of the development of science and how quantum-mechanics is starting to get into our every day life. These slides have been adopted from Motti Heiblum original...
Reading Material for Introductory Concepts in Quantum Mechanics