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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Introduction to process modeling
04 Aug 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of slides introduces the students into basic concepts of process modeling.
Smith Chart Examples
Smith charts are used in RF applications to represent S-parameters and reflection coefficients of a two-port network. Examples are also given on calculation of the S-parameters for MEMT Structures using Silvaco ATLAS BLAZE module. Matching network construction is also illustrated.
This set of lecture notes introduces the students to the concept of s-parameters that are used for characterization of RF circuits.
Silvaco Athena - Part 1
04 Aug 2011 | Contributor(s):: Dragica Vasileska
This is part of a series of lectures on process modeling. In this lecture some introductory concepts are described followed by a description of the ion implantation process.
Silvaco Athena - Part 2
This set of powerpoint slides describes the diffusion and the oxidation process. Also briefly described are etching and epitaxy process.
Test for Monte Carlo Learning Module
30 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
this is a test for the MC Learning Module.
Device Parameters Extraction Within Silvaco Simulation Software
30 Jul 2011 | Contributor(s):: Dragica Vasileska
This set of slides explains the extract statements within SILVACO simulation software.
This set of slides describes the quantum-mechanical process for tunneling and how it is accounted for in modeling semiconductor devices. We explain WKB approximation, transfer matrix approach and the Tsu-Esaki formula for the calculation of the current.
Why Computational Electromagnetics?
28 Jul 2011 | Contributor(s):: Dragica Vasileska
This set of lectures explains the need for computational electromagnetics and what methods are available for solving electromagnetic problems.
This set of lecture notes explains electro-thermal and thermo-electric effects as they occur in semiconductor materials and devices.
ACUTE - Process Simulation Assignment
28 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students the ion implantation process.
Real space treatment of Electron_Electron and Electron-Ion Interactions in Particle-based Simulators
22 Jul 2011 | Contributor(s):: Dragica Vasileska
This material teaches the students how to incorporate e-e and e-i interactions effectivelly and accurately within a particle-based device simulation scheme.
Schred: Solve a Challenge
21 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a challenge problem for Schred.
Test for SCHRED
21 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a test that checks the knowledge of the students before and after performing the exercises in the Schred Learning Module. It examines whether students understand concepts of quantum confinement, MOS capacitance and average distance of the carriers.
MESFET Operation Description
15 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of slides gives MESFET operation description from a physical standpoint.
AQME: SCHRED Assignment – Quantum Confinement
13 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students about quantum confinement in MOS capacitors.
MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.
Test for Abacus
This test checks preparedness of students in semiconductor device theory.
Exercise: Resonant Tunneling Diode
This is an exercise for resonant tunneling diode.
RTD Topic Page: Test for Resonant Tunneling Diode
This is a test for Resonant Tunneling Diode topic page.