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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Homework Exercise on Bravais Lattices, Crystal Structures, Miller Indices
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30 Mar 2008 | | Contributor(s):: Abhijeet Paul, Gerhard Klimeck
The tutorial questions based on Crystal Viewer Lab v1.0 available online at Crystal Viewer Lab. Students are asked to explore different Bravais lattices, crystal structures, and Miller indices. Reference / course book: Semiconductor Device Fundamentals by Robert E. PierretNCN@Purdue
Quantum Dot Spectra, Absorption, and State Symmetry: an Exercise
30 Mar 2008 | | Contributor(s):: Gerhard Klimeck
The tutorial questions based on the Quantum Dot Lab v1.0 available online at Quantum Dot Lab. Students are asked to explore the various different quantum dot shapes, optimize the intra-band absorption through geometry variations, and consider the concepts of state symmetry and eigenstates.NCN@Purdue
Homework Exercise on Drift & Diffusion in Bulk Semiconductors - considerations of lifetime
30 Mar 2008 | | Contributor(s):: Mark Lundstrom, Saumitra Raj Mehrotra
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light. Analytical derivations are requested and considerations of lifetime are considered.NCN@Purdue
Homework Exercise on Drift & Diffusion in Bulk Semiconductors
30 Mar 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light.NCN@Purdue
Homework Exercise on Bipolar Junction Transistors
30 Mar 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck
The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is requested.NCN@Purdue
Illinois Tools: Effect of Doping on Semiconductors
01 Feb 2008 | | Contributor(s):: Umberto Ravaioli, Nahil Sobh
This Java applet allows students to visualize the effects of doping on carrier concentration in bulk silicon. It utilizes the non-degenerate Maxwell statistics to explore the effects of doping and temperature on carrier concentration and the energy band diagram.Developed in conjunction with Kent...
Homework Assignment: Periodic Potentials
31 Jan 2008 | | Contributor(s):: David K. Ferry
Using the Periodic Potential Lab on nanoHUB determine the allowed bands for an energy barrier of 5 eV, a periodicity W = 0.5nm, and a barrier thickness of 0.1nm. How do these bands change if the barrier thickness is changed to 0.2 nm?
Finite Height Quantum Well: an Exercise for Band Structure
Use the Resonant Tunneling Diodes simulation tool on nanoHUB to explore the effects of finite height quantum wells.Looking at a 2 barrier device, 300 K, no bias, other standard variables, and 3 nm thick barriers and a 7 nm quantum well, determine the energies of the two lowest quasi-bound states.
MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20, and...
Semiconductor Device Education Material
28 Jan 2008 | | Contributor(s):: Gerhard Klimeck
This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...
ECE 495N F07 Exam 2 (Lectures 15-25)
20 Nov 2007 | | Contributor(s):: Supriyo Datta
ECE 495N F07 Practice Exam 2
ECE 495N F07 Homework 7 (Lectures 22-25)
ECE 495N F07 Homework 1 (Lectures 1-6)
17 Oct 2007 | | Contributor(s):: Saptarshi Das
ECE 495N F07 Homework 6 (Lectures 22-25)
26 Oct 2007 | | Contributor(s):: Supriyo Datta, Saptarshi Das
ECE 495N F07 Homework 4 (Lectures 15-17)
ECE 495N F07 Exam 1 (Lectures 1-14)
ECE 495N F07 Homework 3 (Lectures 11-14)
ECE 495N F07 Homework 2 (Lectures 7-10)
ECE 495N F07 Practice Exam 1