
Introductory Comments for Confined Carriers
30 Jun 2011   Contributor(s):: Dragica Vasileska
These handwritten notes give introductory notes for confined carriers and are part of the Semiconductor Transport class.

General Concepts of Modeling Semiconductor Devices
27 Jun 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This presentation is part of a series: Nanoelectronics and Modeling at the Nanoscale. It elucidates on the various methodologies needed for modeling semiconductor devices.

Physics of Current and Future Devices
27 Jun 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of powerpoint slides is part of a series Nanoelectronics and Modeling at the Nanoscale. It gives a glimpse on effects that occur in current and future nanoscale devices that have to be properly captured with appropriate physical models.

Technology Trends as seen in Year 2011
24 Jun 2011   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this presentations we discuss Nanotechnology Trends as seen in Year 2011.

Manual for the Generalized Bulk Monte Carlo Tool
24 Jun 2011   Contributor(s):: Raghuraj Hathwar, Dragica Vasileska
This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.

ElectronElectron Interactions
20 Jun 2011   Contributor(s):: Dragica Vasileska
This set of slides describes the electronelectron interactions scattering rates calculations as it occurs in bulk materials, lowdimensional structures and semiconductor devices.

Lowdimensional structures
20 Jun 2011   Contributor(s):: Dragica Vasileska
This set of slides describes some general properties of lowdimensional systems and their applications in nanoelectronics.

Scattering rates of confined carriers
20 Jun 2011   Contributor(s):: Dragica Vasileska
Scattering rates of acoustic phonon scattering and interface roughness are described for a case of 1D confinement.

Generalized Monte Carlo Presentation
20 Jun 2011   Contributor(s):: Dragica Vasileska
This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steadystate velocityfield characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a nonparabolic bandstructure.

Periodic Potential Lab Worked Examples
11 Apr 2011   Contributor(s):: SungGeun Kim, Abhijeet Paul, Gerhard Klimeck, Lynn Zentner, Benjamin P Haley
Worked Examples for Periodic Potential Lab

ADEPT 2.0 FirstTime User Guide
03 Mar 2011   Contributor(s):: Xufeng Wang
This firsttime user guide provides a basic walkthrough on how to run the ADEPT simulation tool.

Quantum Dot Lab: FirstTime User Guide
08 Feb 2011   Contributor(s):: SungGeun Kim, Lynn Zentner
This firsttime user guide introduces the quantum dot lab tool. It includes an explanation of the input/output interface and the relationship between inputs and outputs of the quantum dot lab.NCN@Purdue[1] Gerhard Klimeck, Introduction to Quantum Dot Lab: https://www.nanohub.org/resources/4194[2]...

Solution of the Boltzmann Equation under lowfield conditions
05 Feb 2011   Contributor(s):: Dragica Vasileska
In this presentation it is explained clearly when one can use the relaxation approximation and when one needs to use Rode's iterative method to calculate the lowfield mobility in semiconductors. At the end examples are given of the effective and Hall mobilities which, as can be seen from the...

Acoustic Phonon Scattering Explained
05 Feb 2011   Contributor(s):: Dragica Vasileska
In this lecture notes we derive and explain acoustic deformation potential scattering as it applies to transport calculations in covalent semiconductors.

OMEN Nanowire: solve the challenge
05 Feb 2011   Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

BJT Lab Worked Out Problem 2
02 Feb 2011   Contributor(s):: Saumitra Raj Mehrotra
This sample worked out problem simulated a pnp type BJT in Common Base configuration and calculates AC and DC amplification ratios.

BJT Lab Worked Out Problem 1
01 Feb 2011   Contributor(s):: Saumitra Raj Mehrotra
This sample worked out problem analyzes the output characteristic curves of an npn BJT transistor and extracts the relevant parameters.

Boltzmann Transport Equation and Scattering Theory
01 Feb 2011   Contributor(s):: Dragica Vasileska
In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.

BJT Lab  Amplifier
31 Jan 2011   Contributor(s):: Saumitra Raj Mehrotra
This real life problem designs and calculates the AC amplification ratio for a CommonEmitter configuration npn type BJT.

OMEN Nanowire Homework Problems
24 Jan 2011   Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the firsttime user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.