Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Teaching Materials (101-120 of 408)

  1. OMEN Nanowire Test Problems

    24 Jan 2011 | | Contributor(s):: SungGeun Kim

    This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.

  2. MOSCAP CV profiling

    05 Jan 2011 | | Contributor(s):: Saumitra Raj Mehrotra

    This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.

  3. MOSFET Lab - Scaling

    03 Jan 2011 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

  4. MOSFET Design Calculations - Step 1

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  5. PN Junctions: Simulation and Calculation of Electrostatic Variables

    02 Jan 2011 | | Contributor(s):: Stella Quinones

    Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...

  6. MOSFET Design Calculations - Step 1 (Instructor Copy)

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  7. PN Junctions: Simulations and Calculations of Electrostatic Variables (Instructor Copy)

    02 Jan 2011 | | Contributor(s):: Stella Quinones

    Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...

  8. MOSFET Design Calculations - Step 2

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  9. MOSFET Design Calculations - Step 2 (Instructor Copy)

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  10. MOSFET Worked out problems 1

    06 Dec 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

  11. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

  12. Quantum dot - Design a laser

    09 Nov 2010 | | Contributor(s):: SungGeun Kim

    This document is a real-life problem for the quantum dot lab tool. Basic knowledge on the operation principle of a quantum dot laser is needed to solve this test. The test requires the tested person to be familar with the quantum dot lab tool.

  13. Test for Quantum Dot Lab tool

    09 Nov 2010 | | Contributor(s):: SungGeun Kim, Saumitra Raj Mehrotra

    This test is aimed at self-learning students or instructors who may be engaged in teaching classes related to the quantum dot lab tool.The level of this test should not be difficult for a student who has gone through "the general tutorial to quantum dots,""the introductory tutorial to the quantum...

  14. ABACUS: Test for MOSFET Tool

    18 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

  15. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

  16. Rappturizer

    06 Oct 2010 | | Contributor(s):: David Alberto Saenz

    This resource is a program which helps to build simple rappture applications. The user will just have to input the information about their code and a template and XML file will be automatically generated for the user to just copy/paste his calculations and let the template do the rest. A detailed...

  17. ABACUS: Test for BJT lab Tool

    06 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

  18. Verification of the Validity of the BJT Tool

    24 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

  19. MOSCAP Worked out problems (Basic)

    19 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

  20. Drift Diffusion Lab Worked out problems (Drift)

    18 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.