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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Crystal Viewer Lab Exercise
28 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
A central problem in the investigation of material properties involves the examination of the underlying blocks that aggregate to form macroscopic bodies. These underlying blocs own a definite arrangement that is repeated in three dimensions to give the crystal structure. We will try to explore...
Negative Differential Resistivity Exercise
In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins postulated that peculiarities in the band structure of semiconductors would lead to the above phenomenon....
Exercise for MOSFET Lab: Device Scaling
28 Jun 2010 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise explores device scaling and how well devices are designed.
Quantum Bound States Exercise
16 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Exercise BackgroundQuantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wave-functions. One such system is a...
Quantum Tunneling Exercise
Exercise BackgroundTunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant...
Periodic Potentials Exercise
In this exercise, various calculations of the electronic band structure of a one-dimensional crystal are performed with the Kronig-Penney (KP) model. This model has an analytical solution and therefore allows for simple calculations. More realistic models always require extensive numeric...
Crystal Viewer Tool Verification (V 2.3.4)
15 Jun 2010 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This text verifies the Crystal Viewer Tool by comparing the amount of dangling bonds at the silicon surface for ,  and  crystal orientation. The crystal viewer results are in agreement with experimental findings.
Crystal Structures - Packing Efficiency Exercise
Consider the most efficient way of packing together equal-sized spheres and stacking close-packed atomic planes in three dimensions. For example, if plane A lies beneath plane B, there are two possible ways of placing an additional atom on top of layer B. If an additional layer was placed...
08 Jun 2010 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a manual for the Piece-Wise Constant Potential Barrier Tool.
Tight-Binding Band Structure Calculation Method
This set of slides describes on simple example of a 1D lattice, the basic idea behind the Tight-Binding Method for band structure calculation.
Poisson Equation Solvers
08 Jun 2010 | Contributor(s):: Dragica Vasileska
There are two general schemes for solving linear systems: Direct Elimination Methods, and Iterative Methods.All the direct methods are, in some sense, based on the standard Gauss Elimination technique, which systematically applies row operations to transform the original system of equations into...
Poisson Equation Solvers - General Considerations
We describe the need for numerical modeling, the finite difference method, the conversion from continuous set to set of matrix equations, types of solvers for solving sparse matrix equations of the form Ax=b that result, for example, from the finite difference discretization of the Poisson Equation.
Conjugate Gradient Tutorial
This is an extensive tutorial on the description and implementation of the basic conjugate gradient method and its variants.
This set of slides describe the idea behind the multigrid method and its implementation.
08 Jun 2010 | Contributor(s):: David K. Ferry, Dragica Vasileska, Gerhard Klimeck
In mineralogy and crystallography, a crystal structure is a unique arrangement of atoms in a crystal. A crystal structure is composed of a basis, a set of atoms arranged in a particular way, and a lattice. The basis is located upon the points of a lattice spanned by lattice vectors, which is an...
Crystal Directions and Miller Indices
Miller indices are a notation system in crystallography for planes and directions in crystal lattices. In particular, a family of lattice planes is determined by three integers, l, m, and n, the Miller indices. They are written (lmn) and denote planes orthogonal to a direction (l,m,n) in the...
Verification of the Validity of the PN Junction Tool
These simulations and comparisons with the depletion charge approximation prove the validity of the PN Junction tool.
Solve a Challenge for a PN Diode
This is SOLVE A CHALLENGE PROBLEM for pn-diodes.
Drift-Diffusion Modeling and Numerical Implementation Details
01 Jun 2010 | Contributor(s):: Dragica Vasileska
This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...
Physical and Analytical Description of the Operation of a PN Diode
A detailed physical and analytical description of the operation of PN diodes is given.vasileska.faculty.asu.eduNSF