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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Molecular Orbital Theory
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18 Dec 2006 | | Contributor(s):: Luis Emmanuel Bonilla
This is the seventh contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.Luis Bonilla and Abel Perez have designed a presentation on molecular orbital theory for high school students.Abel Perez: I obtained my BS at Instituto...
11 Dec 2006 | | Contributor(s):: Victor Hugo Estrada Rivera , Elizabeth Gardner
This is the third contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.This PowerPoint presentation describes a brief history of how the transistor was developed, how a transistor works and its possible applications. It is at...
Homework for PN Junctions: Depletion Approximation (ECE 606)
09 Jan 2006 | | Contributor(s):: Muhammad A. Alam
This homework assignment is part of ECE 606 "Solid State Devices" (Purdue University). It contains 5 problems which lead students through a comparison of the depletion approximation and an exact solution of PN junction diodes.Students compute the exact solution by using the PN Junction Lab...
Homework for Circuit Simulation: ECE 255
08 Jan 2006 | | Contributor(s):: Gerold Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, orsometimes check their work, by using the Spice 3F4 simulator on the nanoHUB.
Homework for Monte Carlo Method: High field transport in Bulk Si
06 Jan 2006 | | Contributor(s):: Muhammad A. Alam
This homework assignment is part of ECE 656 "Electronic Transport in Semiconductors" (Purdue University). It contains 10 problems which lead students through the simulation of high-field transport in bulk silicon.
Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006 | | Contributor(s):: Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation and the exact analysis of a PN junction diode.
Resonant Tunneling Diodes: an Exercise
06 Jan 2006 | | Contributor(s):: H.-S. Philip Wong
This homework assignment was created by H.-S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises and two design problems, intended to teach students the electronic properties of resonant tunneling...
Exercises for FETToy
11 Oct 2005 | | Contributor(s):: Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.