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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
out of 5 stars
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
MOSFET Design Calculations - Step 3
01 Apr 2012 | | Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
MOSFET Design Calculations - Step 3 (Instructor Copy)
Viktor Glushkov - Pioneer of Cybernetics
19 Mar 2012 | | Contributor(s):: Yuri A Kruglyak
Presentation slides of seminar given for students of Faculty for computer sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak.
Carbon NanoTubes: Structure - Properties - Applications
Presentation slides for seminar given for students of Faculty of Computer Sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak on May 22, 2008.
MOSFET Design Simulation I
07 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
MOSFET Design Simulation I (Instructor Copy)
MOSFET Design Calculations - Step 2 (Instructor Copy)
05 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
MOSFET Design Calculations - Step 2
C++ Programming Examples I
02 Mar 2012 | | Contributor(s):: David A Saenz
A set of simple C++ programming examples, from a basic Hello World to an example of the use of pointers.David Saenz, O'Reili book: Practical C++ programmingPractical C++ ProgrammingNCN Project, Purdue University
13 Feb 2012 | | Contributor(s):: James Fonseca, Sebastian Steiger
Updated Sep 2, 2015 revision 21229Uploaded Nov 11, 2014, revision 17811MetaPoissonQTBM5 solver options, uploaded Jan 29, 2014. (Click "additional materials")Device Specification for simplified device geometries uploaded Jan 30, 2014. (Click "additional materials")
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
05 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
15 Aug 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
Solid State Lightening and LEDs
15 Aug 2011 | | Contributor(s):: Dragica Vasileska
This lecture is part of a Computational optoelectronics class that is taught at ASU by Prof. Vasileska.
Quantum Computing - Introduction
Quantum Computing - Experiments
Green's Functions Method Explained
10 Aug 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a tutorial on non-equilibrium Green's functions.
Silvaco Athena - Part 3
09 Aug 2011 | | Contributor(s):: Dragica Vasileska
This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.
1-D Modeling of HgCdTe Photodetectors Operated at Low Temperatures
04 Aug 2011 | | Contributor(s):: pradyumna muralidharan, Dragica Vasileska
This presentation describes the capabilities of the tool OPTODET: 1D HgCdTe photodetector modeling tool.