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Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Tools (141-160 of 168)

  1. Nano-CMOS

    06 Feb 2007 | Tools | Contributor(s): Wei Zhao, Yu Cao

    Predictive model files for future transistor technologies.

  2. NanoNet

    17 Jan 2007 | Tools | Contributor(s): Satish Kumar, Man Prakash Gupta, Ninad Pimparkar, Jayathi Murthy, Muhammad Alam

    A simulation tool for Thin films transistors based on network of nanotubes or nanowires

  3. CNTbands

    14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed

    This tool simulates E-k and DOS of CNTs and graphene nanoribbons.

  4. demons

    31 Oct 2006 | Tools | Contributor(s): M. E. Klausmeier-Brown, C. M. Maziar, P. E. Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck

    Improved program consists of DEMON and SDEMON

  5. Process Lab: Defect-coupled diffusion

    09 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin

    This tool simulates dopant diffusion coupled with point defects.

  6. Process Lab: Concentration-Dependent Diffusion

    09 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin

    This modules simulates both the standard diffusion and concentration-dependent diffusion.

  7. Process Lab:Oxidation

    09 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin

    Integrated Circuit Fabrication Process Simulation

  8. Process Lab: Oxidation Flux

    09 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin

    This module simulates the oxidation flux.

  9. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes device reliability based on NBTI

  10. nano-Materials Simulation Toolkit

    08 Aug 2006 | Tools | Contributor(s): Alejandro Strachan, Amritanshu Palaria, Ya Zhou, Janam Jhaveri

    Molecular Dynamics simulations of nano-materials

  11. SEST

    16 Jun 2006 | Tools | Contributor(s): Gang Li, Zhi Tang, Huijuan Zhao, Narayan Aluru

    Compute the strain effects on the thermal properties of bulk crystalline silicon

  12. CGTB

    15 Jun 2006 | Tools | Contributor(s): Gang Li, Yang Xu, Narayan Aluru

    Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model

  13. CNTphonons

    30 May 2006 | Tools | Contributor(s): Marcelo Alejandro Kuroda, Salvador Barraza-Lopez, J. P. Leburton

    Calculates the phonon band structure of carbon nanotubes using the force constant method.

  14. Nanowire

    19 May 2006 | Tools | Contributor(s): Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley

    Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution

  15. Band Structure Lab

    19 May 2006 | Tools | Contributor(s): Samik Mukherjee, Kai Miao, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, James Fonseca, Hesameddin Ilatikhameneh, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck

    Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires

  16. MOSCap

    06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

    Capacitance of a MOS device

  17. MOSFet

    30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

    Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

  18. QC-Lab

    14 Feb 2006 | Tools | Contributor(s): Baudilio Tejerina

    Quantum Chemsitry Lab: Ab Initio and DFT molecular and electronic structure calculations of small molecules

  19. Schred

    30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng

    SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

  20. Padre

    12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska

    2D/3D devices under steady state, transient conditions or AC small-signal analysis, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.