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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
27 Sep 2009 | | Contributor(s):: Alexander S McLeod, Peter Doak, Sahar Sharifzadeh, Jeffrey B. Neaton
This is an educational tool that illustrates the calculation of the electronic structure of materials using many-body perturbation theory within the GW approximation
06 Feb 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Boltzmann Transport Simulator for CNTs
20 Feb 2008 | | Contributor(s):: Zlatan Aksamija, Umberto Ravaioli
Simulate Electron transport in Single-walled carbon nanotubes using an upwinding discretization of the Boltzmann transport equation in the relaxation time approximation.
Bound States Calculation Lab
05 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Xufeng Wang
Calculates bound states for square, parabolic, triangular and V-shaped potential energy profile
Breakdown Voltage & Current Density Calculator for meso scale gaps
14 Jul 2016 | | Contributor(s):: Sebastian Camilo Mendoza Rincon, Siva Sashank Tholeti, Alina Alexeenko
Calculates breakdown voltage and Fowler-Nordheim current density for meso scale gaps
Brillouin Zone Viewer
25 Jan 2011 | | Contributor(s):: Prasad Sarangapani, Arun Goud Akkala, Sebastian Steiger, Hong-Hyun Park, Yosef Borga, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
Visualize Brillouin zones of different crystals and different unit cells
Bulk Heterojunction Morphology Generator
11 Feb 2013 | | Contributor(s):: Michael C. Heiber
This tool creates nanoscale bulk heterojunction morphologies for use with organic photovoltaics simulations
Carbon nanotube based fixed-fixed NEMS
28 Jan 2008 | | Contributor(s):: Pradeep Kumar Gudla, Aswin Kannan, Zhi Tang, Narayan Aluru
Simulates pull-in behavior of Carbon nanotube based NEMS with fixed-fixed boundary conditions, with and without Vander Waal's effect
Carbon Nanotube Relay
01 Apr 2009 | | Contributor(s):: Sansiri Tanachutiwat, wei wang
CNT NEMS as mechanical relay for memory applications
Carbon Nanotubes Interconnect Analyzer (CNIA)
14 Mar 2007 | | Contributor(s):: Sansiri Tanachutiwat, Wei Wang
Analyze performances of carbon nanotube bundle interconnects
13 Jun 2012 | | Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
Carrier Statistics Lab
08 Jan 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck
Calculate the electron & hole density in semiconductors
15 Jun 2006 | | Contributor(s):: Gang Li, yang xu, Narayan Aluru
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
07 Jun 2008 | | Contributor(s):: Eldad Tamman
Simulate clusters configurations of nanomagnets
CNT Heterojunction Modeler
20 Mar 2008 | | Contributor(s):: Joe Ringgenberg, Joydeep Bhattacharjee, Jeffrey B. Neaton, Jeffrey C Grossman
Study the structure and electronic properties of carbon nanotubes with linear heterojunctions.
26 Apr 2009 | | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
14 Dec 2006 | | Contributor(s):: Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
13 Mar 2006 | | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
30 May 2006 | | Contributor(s):: Marcelo Kuroda, Salvador Barraza-Lopez,
Calculates the phonon band structure of carbon nanotubes using the force constant method.