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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
20 May 2011 | | Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.
17 Mar 2008 | | Contributor(s):: Sansiri Tanachutiwat, Wei Wang, Nicholas Anthony Connelly
Estimate performances of graphene interconnects
Graphene Raman Imaging and Spectroscopy Processing v1.2
06 Feb 2012 | | Contributor(s):: matias gabriel babenco, Li Tao, Deji Akinwande
Raman spectroscopy processing for Graphene growth characterization
Graphene Switch Box
01 Apr 2009 | | Contributor(s):: Sansiri Tanachutiwat, wei wang
Graphene Switch Box for FPGA Interconnects
Illinois Tools: Basic Bulk Silicon Transport Data at 300K
27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan
Calculations of doped bulk silicon transport data (new version release)
Illinois Tools: MOCA
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures
Illinois Tools: NP Junction: Long-Base Depletion Approximation
26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed
Illinois Tools: NP Junction: Short-Base Depletion Approximation
Illinois Tools: PN Junction Long-Base Depletion Approximation
Depletion Approximation for a PN Junction
Illinois Tools: PN Junction Short-Base Depletion Approximation
28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
Intro to MOS-Capacitor Tool
09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
Introduction to Solid State Electronic Devices Classes Tools
26 Jul 2008 | | Contributor(s):: Mohamed Mohamed, Nahil Sobh, Kyeong-hyun Park
Tools to complement Illinois Solid State Electronic Devices Classes
KP Nanowire/UTB FET
22 Mar 2009 | | Contributor(s):: Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method
LAMMPS Data-File Generator
01 Aug 2017 | | Contributor(s):: Carlos Miguel Patiño, Lorena Alzate-Vargas, Chunyu Li, Benjamin P Haley, Alejandro Strachan
This tool generates all necessary input files for LAMMPS simulations of molecular systems starting with an atomistic structure.
LAMMPS structure generator
01 Nov 2016 | | Contributor(s):: Benjamin P Haley
Convert a molecular structure file to a LAMMPS data file with force field parameters
17 Sep 2013 | | Contributor(s):: Kyle Conrad, Jesse Maassen, Mark Lundstrom
This tool calculates the distribution of modes, the electronic thermoelectric transport coefficients, and the lattice thermal transport properties from band structure information.
Linearized Boltzmann transport calculator for thermoelectric materials
11 Jul 2013 | | Contributor(s):: Je-Hyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri
Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation
Lorentzian fitting tool for phonon spectral energy density and general use
20 Oct 2015 | | Contributor(s):: Tianli Feng, Xiulin Ruan
Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).