Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Tools (61-80 of 202)

  1. FETToy

    14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  2. GFET Tool

    20 May 2011 | | Contributor(s):: Eric Pop, Feifei Lian

    Simulate the electrical and thermal properties of a graphene field-effect transistor.

  3. Graphene Interconnect

    17 Mar 2008 | | Contributor(s):: Sansiri Tanachutiwat, Wei Wang, Nicholas Anthony Connelly

    Estimate performances of graphene interconnects

  4. Graphene Raman Imaging and Spectroscopy Processing v1.2

    06 Feb 2012 | | Contributor(s):: matias gabriel babenco, Li Tao, Deji Akinwande

    Raman spectroscopy processing for Graphene growth characterization

  5. Graphene Switch Box

    01 Apr 2009 | | Contributor(s):: Sansiri Tanachutiwat, wei wang

    Graphene Switch Box for FPGA Interconnects

  6. Illinois Tools: Basic Bulk Silicon Transport Data at 300K

    27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan

    Calculations of doped bulk silicon transport data (new version release)

  7. Illinois Tools: MOCA

    28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park

    2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

  8. Illinois Tools: NP Junction: Long-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Tool Description

  9. Illinois Tools: NP Junction: Short-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Tool Description

  10. Illinois Tools: PN Junction Long-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Depletion Approximation for a PN Junction

  11. Illinois Tools: PN Junction Short-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Tool Description

  12. Impedance Adder

    28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

  13. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  14. Introduction to Solid State Electronic Devices Classes Tools

    26 Jul 2008 | | Contributor(s):: Mohamed Mohamed, Nahil Sobh, Kyeong-hyun Park

    Tools to complement Illinois Solid State Electronic Devices Classes

  15. KP Nanowire/UTB FET

    22 Mar 2009 | | Contributor(s):: Mincheol Shin

    Simulate Nanowire/UTB FETs Using KP method

  16. LAMMPS Data-File Generator

    01 Aug 2017 | | Contributor(s):: Carlos Miguel Patiño, Lorena Alzate-Vargas, Chunyu Li, Benjamin P Haley, Alejandro Strachan

    This tool generates all necessary input files for LAMMPS simulations of molecular systems starting with an atomistic structure.

  17. LAMMPS structure generator

    01 Nov 2016 | | Contributor(s):: Benjamin P Haley

    Convert a molecular structure file to a LAMMPS data file with force field parameters

  18. LanTraP

    17 Sep 2013 | | Contributor(s):: Kyle Conrad, Jesse Maassen, Mark Lundstrom

    This tool calculates the distribution of modes, the electronic thermoelectric transport coefficients, and the lattice thermal transport properties from band structure information.

  19. Linearized Boltzmann transport calculator for thermoelectric materials

    11 Jul 2013 | | Contributor(s):: Je-Hyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri

    Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation

  20. Lorentzian fitting tool for phonon spectral energy density and general use

    20 Oct 2015 | | Contributor(s):: Tianli Feng, Xiulin Ruan

    Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).