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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Exciton Dynamics Simulator
31 Dec 2012 | | Contributor(s):: Michael Heiber
Simulates the exciton dynamics in organic photovolatic devices
Exciton Annihilation Simulator
12 Dec 2012 | | Contributor(s):: Michael Heiber
Simulates exciton-exciton annihilation behavior of organic semiconductors measured by pump-probe spectroscopy
Energies and Lifetimes with Complex-Scaling
02 Apr 2012 | | Contributor(s):: Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.
Graphene Raman Imaging and Spectroscopy Processing v1.2
06 Feb 2012 | | Contributor(s):: matias gabriel babenco, Li Tao, Deji Akinwande
Raman spectroscopy processing for Graphene growth characterization
Passive Filter Circuits
12 Jul 2012 | | Contributor(s):: Rhea Khanna, Ogaga Daniel Odele, Krishna P. C. Madhavan, Aung Kyi San
Simulation of first and second order Passive Filter circuits.
Mobility and Resistivity Tool
15 Jun 2012 | | Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.
13 Jun 2012 | | Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
24 Apr 2012 | | Contributor(s):: Robert Benjamin Post, Stella Quinones
Calculate and observe the relationship between current, voltage, resistance, and power.
Minority Carrier Diffusion Equation (MCDE) Tool
26 Apr 2012 | | Contributor(s):: Ivan Santos, Stella Quinones
Apply the Minority Carrier Diffusion Equation (MCDE) to model excess carrier concentration as a function of time or distance.
11 Apr 2012 | | Contributor(s):: Ivan Santos, Stella Quinones
Understand N-Type and P-Type Semiconductor Doping.
28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
Series and Parallel
17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
17 Apr 2012 | | Contributor(s):: Robert Benjamin Post, Stella Quinones
Convert from Delta to Wye configuration for resistances, and vice versa.
28 Feb 2012 | | Contributor(s):: Stella Quinones, Robert Benjamin Post
Visualize and understand the complex numbers represented in both rectangular and polar coordinates.
10 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
Resistor Color Code
10 Feb 2012 | | Contributor(s):: Robert Benjamin Post, Stella Quinones
Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.
XPS Thickness Solver
18 Dec 2011 | | Contributor(s):: Kyle Christopher Smith, David A Saenz, Dmitry Zemlyanov, Andrey Voevodin
Helps the user to determine the thickness of an overlayer material from XPS experiment data.
TRANSpull: computes pulling coupled to transport properties of single molecules.
27 Jul 2011 | | Contributor(s):: Jason Hutcheson, Ignacio Franco, Renaud Nicolas, Marcelo Carignano, Mark Ratner, George C. Schatz
Calculates the electronic transport properties of single molecules as they are mechanically elongated.
20 May 2011 | | Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.