Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Series and Parallel
17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
17 Apr 2012 | | Contributor(s):: Robert Benjamin Post, Stella Quinones
Convert from Delta to Wye configuration for resistances, and vice versa.
28 Feb 2012 | | Contributor(s):: Stella Quinones, Robert Benjamin Post
Visualize and understand the complex numbers represented in both rectangular and polar coordinates.
10 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
Resistor Color Code
10 Feb 2012 | | Contributor(s):: Robert Benjamin Post, Stella Quinones
Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.
XPS Thickness Solver
18 Dec 2011 | | Contributor(s):: Kyle Christopher Smith, David A Saenz, Dmitry Zemlyanov, Andrey Voevodin
Helps the user to determine the thickness of an overlayer material from XPS experiment data.
TRANSpull: computes pulling coupled to transport properties of single molecules.
27 Jul 2011 | | Contributor(s):: Jason Hutcheson, Ignacio Franco, Renaud Nicolas, Marcelo Carignano, Mark Ratner, George C. Schatz
Calculates the electronic transport properties of single molecules as they are mechanically elongated.
20 May 2011 | | Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.
FD integral calculator
13 Jun 2011 | | Contributor(s):: Xingshu Sun, Mark Lundstrom, raseong kim
Calculate the Fermi-Dirac integral given the fermi energy and the order of integral
Brillouin Zone Viewer
25 Jan 2011 | | Contributor(s):: Prasad Sarangapani, Arun Goud Akkala, Sebastian Steiger, Hong-Hyun Park, Yosef Borga, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
Visualize Brillouin zones of different crystals and different unit cells
On-Chip Thermoelectric Cooling Tool
29 Mar 2011 | | Contributor(s):: Shuaib Salamat, David Alberto Saenz
Simulates an embedded spot peltier cooler on a chip 1D thermal profile.
28 Feb 2011 | | Contributor(s):: Jiantong Li
A Monte Carlo simulator to study percolation characteristics of two-dimensional stick systems
14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Crack Propagation Lab
06 Dec 2010 | | Contributor(s):: Markus Buehler, Justin Riley, Joo-Hyoung Lee, Jeffrey C Grossman
Models supersonic crack propagation in a 2D triangular lattice
27 Sep 2009 | | Contributor(s):: Alexander S McLeod, Peter Doak, Sahar Sharifzadeh, Jeffrey B. Neaton
This is an educational tool that illustrates the calculation of the electronic structure of materials using many-body perturbation theory within the GW approximation
Amorphous Silicon Generator
21 Oct 2010 | | Contributor(s):: Eric Carl Johlin, Lucas Wagner, Jeffrey C Grossman, Justin Riley, David Strubbe, Vardhan Solanki
Simulator for a T-stub transistor in a magnetic field
12 Mar 2010 | | Contributor(s):: Massimo Macucci
Simulates transport and shot noise in a t-stub transistor in the presence of a magnetic field
Nanostructured Optoelectronics Toolbox
19 Oct 2009 | | Contributor(s):: Ian Michael Rousseau, Jeffrey C Grossman, Vladimir Bulovic, Polina Anikeeva
Examine charge and exciton transport in nanostructured optoelectonic devices
Graphene Switch Box
01 Apr 2009 | | Contributor(s):: Sansiri Tanachutiwat, wei wang
Graphene Switch Box for FPGA Interconnects