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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
QWalk Quantum Monte Carlo Tutorial
15 Jun 2007 | | Contributor(s):: Lucas Wagner, Jeffrey C Grossman, Jeffrey B. Neaton, Ian Michael Rousseau
An accurate method to calculate the many body ground state of electrons
Random laser dynamics
12 Sep 2008 | | Contributor(s):: Alexander Gavrilenko, Sarshi Nardren, Taina D. Matos
Simulation of random laser dynamics
Resistor Color Code
10 Feb 2012 | | Contributor(s):: Robert Benjamin Post, Stella Quinones
Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.
Resonant Tunneling Diode Simulation with NEGF
18 Aug 2008 | | Contributor(s):: Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng
Simulate 1D RTDs using NEGF.
Resonant Tunneling Diode Simulator
10 Oct 2005 | | Contributor(s):: Michael McLennan
Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Anjali Bharthuar, Umberto Ravaioli
Calculates low field mobility in III-V semiconductors
19 Jul 2017 | | Contributor(s):: Martin Hunt
Edit a Lua script for the Stanford Stratified Structure Solver and visualize the output
16 Mar 2007 | | Contributor(s):: Arash Hazeghi, Tejas Krishnamohan, H.-S. Philip Wong
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers
30 Mar 2006 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
11 Apr 2012 | | Contributor(s):: Ivan Santos, Stella Quinones
Understand N-Type and P-Type Semiconductor Doping.
Series and Parallel
17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
16 Jun 2006 | | Contributor(s):: Gang Li, Zhi Tang, huijuan zhao, Narayan Aluru
Compute the strain effects on the thermal properties of bulk crystalline silicon
Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization
23 Feb 2014 | | Contributor(s):: Alex Grede
Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.
Simulation based Thermal Design Framework for Accelerated Structure exploration (STEDFAST)
28 Jun 2018 | | Contributor(s):: Prabudhya Roy Roy Chowdhury, Adam Sandor Garrett, Colleen Reynolds, Xiulin Ruan
Perform a genetic algorithm to optimize superlattice structures.
Simulator for a T-stub transistor in a magnetic field
12 Mar 2010 | | Contributor(s):: Massimo Macucci
Simulates transport and shot noise in a t-stub transistor in the presence of a magnetic field
Small Molecules in Intense Lasers via Time-Dependent Density Functional Theory
24 Jul 2009 | | Contributor(s):: Marcela Meza, Daniel Lee Whitenack, Adam Wasserman
Simulate the behavior of a hydrogen molecule when illuminated by an intense laser field.
Specific Resistance for Copper Interconnects
15 Nov 2017 | | Contributor(s):: Daniel A. Valencia-Hoyos, Gustavo A Valencia, Daniel F Mejia, Kuang-Chung Wang, Zhengping Jiang, Gerhard Klimeck, Michael Povolotskyi
This tool calculates the specific resistance $rho(alpha,beta,gamma)$ based on the atomistic model reported in preprint arXiv:1701.04897
Spectral analysis of non-equilibrium molecular dynamics
28 Jun 2017 | | Contributor(s):: Tianli Feng, Yang Zhong, Divya Chalise, Xiulin Ruan
Extract the phonon modal temperature and heat flux from non-equilibrium molecular dynamics
Spectral phonon relaxation time calculation tool by using normal mode analysis based on molecular dynamics
24 Oct 2015 | | Contributor(s):: Tianli Feng, Divya Chalise, Xiulin Ruan
Calculate the spectral phonon relaxation time in solids based on molecular dynamics.
SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
11 Jan 2018 | | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices